Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi Electronics Engineering Co., Ltd.

Hitachi High-tech Electronics Engineering Co., Ltd.

Hitachi High-technologies Corporaation

Yasuo Yatsugake

Minori Noguchi

Yoshikazu Tanabe

Kenji Watanabe

Hirofumi Tsuchiyama

Yukio Kenbou

Ichiro Moriyama

Ichiro Ishimaru

Kyo Suda

Susumu Saito

Michio Suzuki

Katsumi Takami

Takashi Okawa

Kazuya Tsukada

Fukuo Iwaya

Kensaku Takahashi

Makoto Ito

Shigeharu Iizuka

Norihiko Mizutani

A defect inspection apparatus including: a first illumination optical system which is configured to illuminate the inspection area on a sample surface from a normal line direction or a direction near thereof with respect to said sample surface; a second illumination optical system which is configured to illuminate said inspection area from a slant direction with respect to said sample surface; a detection optical system having a plurality of first detectors which are located, in front of, on the sides of, and behind said inspection area, respectively, with respect to the illumination direction of said second illumination optical system, and where the regular reflected light component, from said sample surface, by illumination light of said second illumination optical system, is not converged; and a signal processing system which is configured to inspect a defect, upon basis of signals obtained from said plurality of first detectors.

Surface inspection apparatus and method thereof

The invention provides a surface inspection apparatus and a method for inspecting the surface of a sample that are capable of inspecting discriminatingly between the scratch of various configuration and the adhered foreign object that occur on the surface of a work target when the work target (for example, an insulating film on a semiconductor substrate) is subjected to polishing process such as CMP or grinding process in semiconductor manufacturing process or magnetic head manufacturing process.

An apparatus for detecting defects, including: a first illumination optical unit which illuminates from a normal direction or in the vicinity of the normal direction; a second illumination optical unit which illuminates from a first elevation angle; a first detection optical unit which detects light reflected by the illumination of the first illumination optical unit or the second illumination optical unit with plural detectors; a second detection optical unit which detects light reflected by the illumination of the first illumination optical unit or the second illumination optical unit with plural detectors; wherein the plural detectors of the first detection optical unit and the plural detectors of the second detection optical unit are photomultipliers, and the signal processor processes the signals outputted from the photomultipliers and are adjusted to balance in sensitivities.

A surface inspection apparatus and a method for inspecting the surface of a sample are capable of inspecting discriminatingly between scratches of various configuration and adhered foreign objects that occur on the surface of a work target when the work target (for example, an insulating film on a semiconductor substrate) is subjected to a polishing process such as CMP or a grinding process, in semiconductor manufacturing process or magnetic head manufacturing process. In the invention, the scratch and foreign object that occur on the polished or ground surface of the sample is epi-illuminated and slant-illuminated by use of approximately same light flux, the difference between the scattered light intensity from the shallow scratch and from the foreign object is applied to thereby discriminate between the shallow scratch and the foreign object, and the directionality of the scattered light is detected to discriminate between the linear scratch and the foreign object.

The invention provides a surface inspection apparatus and a method for inspecting the surface of a sample that are capable of inspecting discriminatingly between the scratch of various configuration and the adhered foreign object that occur on the surface of a work target when the work target (for example, an insulating film on a semiconductor substrate) is subjected to polishing process such as CMP or grinding process in semiconductor manufacturing process or magnetic head manufacturing process. In the invention, the scratch and foreign object that occur on the polished or ground surface of the sample is epi-illuminated and slant-illuminated by use of approximately same light flux, the difference between the scattered light intensity emitted from the shallow scratch and that from the foreign object when epi-illumination is applied and slant illumination is applied to thereby discriminate between the shallow scratch and the foreign object, and the directionality of the scattered light when the epi-illumination is applied and the slant illumination is applied is detected to thereby discriminate between the linear scratch and the foreign object.

A wafer surface inspection method and device including a low angle light receiving system having an elevation angle less than 30.degree. with reference to the wafer surface, and a high angle light receiving system having an elevation angle equal to or larger than 30.degree., scans the wafer with a laser beam, receives scattered light to perform extraneous substance detection in response to the scanning, and detects wafer defects only by the high angle light receiving system, and sticking extraneous substances by either the low angle receiving system or by both the low angle light receiving system and the high angle light receiving system.

Inspection method and device of wafer surface

In a small particle detection system for use in detecting small particles, which float in a gas, by utilizing the light scattering effect thereof, a detecting cell is disposed in an external optical resonator which is adapted to resonate with the output light from a laser oscillator. When the detecting cell is disposed in the laser oscillating optical resonator, the position is selectively determined; the former is set in the position in the latter in which the diameter of a laser beam is minimal.

Small particle detection system

A light beam scanning apparatus projects a light beam swept by a light scanner to a spherical mirror and scans by a light beam spot reflected and focused by the spherical mirror a surface of an object arranged to oppose to the spherical mirror at a position spaced from the spherical mirror by a distance equal to a focal distance f of the spherical mirror. An optical path length between the light scanner and the spherical mirror is set to 0.78 f-0.84 f to minimize a curvature of field (circle of confusion).

Growing community of inventors

Kamisato, Japan

Yasuo Yatsugake