Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Yasuo Yamamoto

Takashi Inoue

Masahiko Osada

Yutaka Hattori

Teruhisa Akashi

Masayuki Katayama

Tomoya Uchida

Megumi Suzuki

Hirotaka Suzuki

A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

Semiconductor device and method for manufacturing the same

An EL device includes a control unit that controls a driving circuit so that a plurality of EL elements emits light several times per driving cycle. Specifically, when a driving voltage is applied to the plurality of EL elements, the plurality of EL elements emits several times per driving cycle. As a result, since the amount of light integrated per time increases, the plurality of EL elements obtains high luminous power even if a plurality of El elements having a very short emission decay time is used.

Electroluminescent device with sufficient luminous power and driving method thereof

Growing community of inventors

Kariya, Japan

Yasuo Yamamoto