Fujifilm Corporation

Fujifilm Electronic Materials U.s.a., Inc.

Yasuo Sugishima

Atsushi Mizutani

Mitsuji Yoshibayashi

Kaoru Aoyagi

Yushi Kaneko

William A Wojtczak

Naotsugu Muro

Tomonori Takahashi

Keeyoung Park

Tetsuya Kamimura

Thomas Dory

Raj Sakamuri

Emil A Kneer

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

Treatment liquid and substrate washing method

A treatment liquid for a semiconductor device contains water, a removing agent, and a copolymer. The copolymer has a first repeating unit having at least one group selected from a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit. A substrate treatment method using the treatment liquid is also provided.

Treatment liquid and substrate treatment method

The present invention provides a treatment liquid that exhibits excellent washing properties and improves the smoothness of an object to be treated in a case where the treatment liquid is used for treating an object to be treated containing a cobalt-containing substance. The present invention also provides a method for treating an object to be treated. The treatment liquid according to an embodiment of the present invention contains water, hydroxylamine, and three kinds of first anions consisting of Cl, NO, and NO, in which a total content of the first anions is 0.0001 to 30 parts by mass with respect to 100 parts by mass of the hydroxylamine.

Treatment liquid and method for treating object to be treated

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1).

Chemical liquid and method for treating object to be treated

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Stripping compositions for removing photoresists from semiconductor substrates

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.

Cleaning formulations

The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

Cleaning compositions and methods of use therefor

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.

Semiconductor substrate treatment liquid, treatment method, and method for manufacturing semiconductor-substrate product using these

There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

Etching liquid, kit of same, etching method using same, method for producing semiconductor substrate product, and method for manufacturing semiconductor element

The invention is directed to a colored composition for forming a green color filter, containing a color pigment, wherein a content of the color pigment to a total solid content of the colored composition is 60% by weight or more, and a layer having a thickness of 0.6 &#x3bc;m formed from the colored composition has light transmittance of 80% or more at a wavelength of 550 nm and light transmittance of 50% or less at a wavelength of 450 nm, and a method of producing a color filter including (A) forming a first colored layer containing a first colored composition and (B) patterning with dry etching so as to from a through-hole group in the first colored layer, wherein the first colored composition is the colored composition as defined herein.

Colored composition, method of producing color filter using the same, color filter and solid-state imaging device

This disclosure relates to a method for manufacturing a color filter being capable of suppressing a surface of a colored pattern from being rough in a planarization treatment, a color filter and a solid-state imaging device.

Method for manufacturing a color filter, color filter and solid-state imaging device

The present disclosure relates to a method for manufacturing a color filter being capable of suppressing residue from being generated on a colored layer planarized by a planarization treatment, a color filter, and a solid-state imaging device.

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Shizuoka, Japan

Yasuo Sugishima