Denso Corporation

Nippondenso Co., Ltd.

Yasuo Souki

Akira Kuroyanagi

Masahiro Tomita

Hiroshi Tanaka

Shinji Yoshihara

Kinya Atsumi

Motoki Ito

Hiroshi Muto

Yasushi Tanaka

Hirohito Shioya

Kazuo Tanaka

Yuji Ichikawa

Ryouichi Kubokoya

Muneo Tamura

Koichi Tsubaki

A semiconductor sensor includes an adhesive film for suppressing thermal stress transfer to a semiconductor sensor chip. More specifically, the adhesive film includes a first layer and a second layer. An elasticity modulus of the first layer is lower than that of the second layer, and the second layer has a water absorption smaller than that of the first layer. One surface of a semiconductor wafer is in contact with the first layer. Once the semiconductor wafer and the adhesive film are diced into a plurality of sensor chips, the sensor chip with the adhesive film is mounted on a sensor package via the second layer interposed therebetween.

Semiconductor dynamic sensor and method of manufacturing the same

A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.

Method for separating semiconductor substrate

A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.

Semiconductor device having a flat protective adhesive sheet

A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.

Semiconductor wafer etching method

Semiconductor device with flat protective adhesive sheet and method of manufacturing the same

On a TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si--H bonds is reduced.

Semiconductor device employing silicon nitride layers with varied

On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.

Method of forming silicon nitride with varied hydrogen concentration

Growing community of inventors

Toyota, Japan

Yasuo Souki