Joled Inc.

Panasonic Corporation

Yasuo Segawa

Tomomi Hiraoka

Shinya Ono

Tetsurou Nakamura

Rie Odawara

Kouhei Ebisuno

Toshiyuki Kato

Yosuke Izawa

Takashi Osako

Yasunori Negoro

The present invention provides an organic EL panel and a manufacturing method of the organic EL layer which can slow the reduction in the light emission lifetime of an organic layer and allow a short-circuit defect to be repaired. Organic EL elements include: an organic EL element including a short-circuit portion, and an altered portion formed to be highly resistive by irradiating a cathode with a laser beam; and an organic EL element which does not include the short-circuit portion. In the organic EL element, an organic EL layer emits light when a voltage higher than or equal to a first voltage is applied. In the organic EL element, the organic EL layer emits light when a voltage higher than equal to a second voltage that is higher than the first voltage is applied.

Electro luminescence panel and method for manufacturing electro luminescence panel

Disclosed is a method for measuring luminance of each of entire pixels two-dimensionally arranged in a light-emitting display panel at regular intervals, using an image sensor in which light receiving elements are two-dimensionally arranged at regular intervals, the method including: providing an optical lens between the light-emitting display panel and the image sensor, and adjusting distances between the light-emitting display panel, the image sensor, and the optical lens by setting intervals of images of the entire pixels to be N times as large as intervals of the light receiving pixels, where N is a natural number, the images being to be formed on a light receiving surface of the image sensor through the optical lens; displaying, on the light-emitting display panel, a display pattern in which predetermined pixels from among the entire pixels produce a luminescence; and measuring the luminance of the predetermined pixels, using the light receiving elements.

Method for measuring luminance of light-emitting display panel

A method for fabricating an organic electroluminescence device according to the present invention includes: preparing an organic electroluminescence device having a lower electrode, an organic layer including an emitting layer, an upper electrode, and a shorted part in which the lower electrode and the upper electrode are shorted; and irradiating a part surrounding the shorted part in which the lower electrode and the upper electrode are shorted to alter a material composing the lower electrode or the upper electrode and to form a space between the lower electrode and the upper electrode in a region corresponding to a region surrounded by an altered part.

Method for fabricating organic electroluminescence device and organic electroluminescence device

A method of fabricating an organic EL display apparatus includes: obtaining a representative current (I)-voltage (V) characteristic of a display panel including pixels each having an organic EL device and a driving transistor; dividing the display panel into a plurality of divided regions, and calculating a light-emitting efficiency and a light-emission starting current value for each of the divided regions calculated by a luminance (L)-I characteristic of the divided region; measuring luminance of light emitted from each of the pixels and calculating an L-V characteristic of each of the pixels; calculating an I-V characteristic of each pixel by dividing each luminance value of the L-V characteristic calculated for the pixel by light-emitting efficiency, and by adding a light-emission starting current value; and calculating a correction parameter for each pixel such that the I-V characteristic of each pixel is corrected to the representative I-V characteristic.

Organic EL display apparatus and method of fabricating organic EL display apparatus

A method of fabricating an organic EL display apparatus includes: obtaining a representative current (I)-voltage (V) characteristic of a display panel including pixels each having an organic EL device and a driving transistor; dividing the display panel into a plurality of divided regions, and calculating a light-emitting efficiency and an offset luminance value for each of the divided regions calculated by an I-luminance (L) characteristic of the divided region; measuring luminance of light emitted from each of the pixels and calculating an L-V characteristic of each of the pixels; calculating an L-V characteristic of each divided region by dividing each current value of the representative I-V characteristic by light-emitting efficiency, and by adding an offset luminance value; and calculating a correction parameter for each pixel such that the L-V characteristic of each pixel is corrected to the L-V characteristic of the divided region including the pixel.

A method of manufacturing an organic EL device includes: irradiating a light-emitting region of the organic EL device which includes a defective portion with a laser beam under a first irradiation condition; observing a state of an irradiation mark formed in the light-emitting region through the irradiation with the laser beam in the irradiating under a first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the observed state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of a second irradiation condition.

Organic el device and method of manufacturing organic EL device

A display device includes: a power supplying unit which outputs at least one of a high-side output potential and a low-side output potential; a display unit in which pixels are arranged in a matrix and which receives power supply from the power supplying unit; a monitor wire arranged along a column direction of the pixels in the matrix, which has one end connected to at least one pixel inside the display unit, and is for transmitting the high-side potential to be applied to the pixel; and a voltage regulating unit connected to the other end of the monitor wire, which regulates at least one of the high-side output potential and the low-side output potential to be outputted by the power supplying unit, to set a potential difference between the high-side potential and the low-side potential to a predetermined potential difference.

Display device

A method for manufacturing an organic electroluminescence device includes: preparing the organic electroluminescence device that includes a lower electrode, an organic layer including a light-emitting layer and formed on the lower electrode, an upper electrode formed on the organic layer, and an encapsulating layer formed on the upper electrode, and has a part in which the lower electrode and the upper electrode are shorted; and forming a mixed layer in which a constituent material of the upper electrode and at least one of constituent materials of the organic layer and the thin-film encapsulating layer which are adjacent to the upper electrode are mixed, by irradiating at least one of the shorted part and a region around the shorted part with an ultrashort pulse laser.

Method for manufacturing organic electroluminescence device and organic electroluminescence device

An organic electroluminescence display device includes a display panel including pixels. The pixels each include a light-emitter, driver and capacitor. A storage is configured to store a correction parameter for each of the pixels for correcting, in accordance with characteristics of each of the pixels, an image signal input from an external source. A controller is configured to, for each pixel of the pixels, obtain a corrected signal voltage by reading the correction parameter corresponding to the pixel from the storage and multiplying the image signal corresponding to the pixel by the correction parameter corresponding to the pixel. The storage is configured to store a gain and not an offset as the correction parameter.

Organic electroluminescence display device and organic electroluminescence display device manufacturing method

A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser.

Crystal silicon film forming method, thin-film transistor and display device using the crystal silicon film

An organic EL device (OELD) having a defective portion is irradiated with a laser beam; first luminance of light emitted from the OELD is measured after the OELD is irradiated with the laser beam, while supplying, to the OELD, a first amount of current with which the OELD in a normal state would emit light having luminance corresponding to a first grayscale level smaller than a reference level; the OELD is re-irradiated with the laser beam when the first luminance is smaller than a threshold; and second luminance of light emitted from the OELD is measured when the first luminance is greater than or equal to the threshold, while supplying, to the OELD, a second amount of current with which the OELD in the normal state would emit light having luminance corresponding to a second grayscale level greater than or equal to the reference level.

Method for fabricating organic EL device and method for evaluating organic EL device

A method of manufacturing an organic electroluminescence display includes preparing a substrate including pixels. The pixels each include a drive transistor and a capacitor. The capacitor of a subject pixel is caused to hold a voltage which corresponds to a threshold voltage of the drive transistor, and the voltage is read. A first signal voltage is obtained by adding a first correction parameter of the subject pixel to a second signal voltage corresponding to a single gradation level belonging to an intermediate gradation region or a high gradation region of representative voltage-luminance characteristics. The first signal voltage is applied to the driver of the subject pixel, and a luminance emitted by the subject pixel is measured. A second correction parameter with which the luminance emitted by the subject pixel becomes a standard luminance is calculated.

Organic electroluminescence display device manufacturing method and organic electroluminescence display device

In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.

Light-emitting display device and manufacturing method for light-emitting display device

A method of manufacturing an organic electroluminescence device includes: preparing an organic EL device in which an anode, an organic layer including a luminescent layer, and a cathode formed of a transparent material are stacked in order and which has a shorted defective portion; irradiating the organic EL device with a laser beam from a direction of the cathode; measuring an intensity of radiated light from the organic EL device after the laser beam is absorbed through multiphoton absorption; changing a focal position of the laser beam in a stacking direction for performing the irradiating and measuring, and subsequently determining the focal position of the laser beam in the stacking direction such that the intensity of the radiated light is minimal; and irradiating the determined focal position with the laser beam, so as to solve a defect caused by the shorted defective portion.

Growing community of inventors

Hyogo, Japan

Yasuo Segawa