Nippon Steel Corporation

Meiji Seika Kaisha, Ltd.

Other

Sony Corporation

Asahi Glass Company, Limited

The Japan Steel Works, Ltd.

University of Yamanashi

Koichi Shudo

Nhk Spring Co., Ltd.

Clarion Co

Nippon Electric Co., Ltd.

Nihon Parkerizing Co., Ltd.

Tokyo Keiki Inc.

Hitachi, Ltd.

Yasuo Sato

Katsuyoshi Iwamatsu

Fukio Konno

Kazuko Kobayashi

Hirotomo Miura

Seiji Shibahara

Yugo Tomioka

Shoichi Iwasa

Kunio Atsumi

Mitsugu Hachisu

Kenji Anzai

Toshio Wada

Kazuhito Kishida

Akira Tange

Hiroshi Koyama

Hironobu Narui

Tomonori Hino

Takamasa Sakai

Yuichi Egawa

Satoshi Yoshida

Takashi Watanabe

Hiroshi Kondo

Hiroshi Murakami

Takeshi Harada

Jugo Mitomo

Makoto Aikawa

Tatsuya Maruyama

Kouzou Kage

Yasushi Tomita

Mikihiro Yokozeki

Kikuzo Sawada

Keiichi Ajito

Motoichi Iga

Hiroaki Kato

Fumitaka Sugaya

Teruo Takeuchi

Ikio Yoshida

Ryoichi Yoshihara

Takahide Shimazu

Chika Kikuchi

Kazuhiro Ikeda

Koji Nomaki

Yoshihiro Mizuno

Megumi Yamada

Naoto Sekiya

Hiroshi Mase

Noritaka Kitada

Kou Kumura

Eijirou Umemura

Tsunehiro Saito

Masaaki Yoshikawa

Kazutaka Ueda

Satomi Masaki

Shigeki Amano

Katsuyuki Nishioka

Yoshinari Wakiyama

Masaaki Izumi

Hiroyuki Saoyama

Katsuhiro Terao

Kunio Saeki

Shinsuke Kato

Takako Taniguchi

Tadayoshi Akutsu

Mikio Yamamoto

Shigeharu Inoye

Shoji Shimada

Sojiro Shiokawa

Toshihito Kamioka

Chizuko Kaji

Keisuke Fukumizu

Yoko Hirai

Tatsuo Amaike

Tokushiro Hosoda

Katsuhiro Haruyama

Kunihiko Karasawa

Kazuko Amano

Takahiro Unno

Yukihiro Okeda

Tsutomu Tsuruoka

Shinsuke Katoh

Yukio Yoskikawa

Tetsutaro Niisato

Tomoko Ito

Koutarou Simamura

Provided is a dual-band resonator which can be downsized further than conventional ones. A dual-band resonator is provided with a first conductor and a second conductor. The first conductor is configured to be folded at a first folding part at the center so that both extensions are in a prescribed direction and adjacent to one another with a prescribed space therebetween, wherein a conductor part closer to one end side than the first folding part and a conductor part closer to the other end side than the first folding part are further folded at second folding parts between the one end and the first folding part and between the other end and the first folding part, respectively, in a direction in which the one end and the other end are apart from each other. The second conductor extends in a prescribed direction contiguously to the first folding part of the first conductor. The first conductor constitutes a half-wavelength resonator, and odd-mode resonance occurs in the first conductor. The first conductor and the second conductor constitute a half-wavelength resonator, and even-mode resonance occurs in the first conductor and the second conductor.

Dual-band resonator and dual-band bandpass filter using same

A tunable dual-band resonator and a tunable dual-band band-pass filter using the tunable dual-band resonator. The dual-band resonator is structured such that a stub is added to each half-wavelength resonator provided with half-wavelength resonator protrusions (capacity-component adjust parts). The dual-band resonator is made up of an odd-number mode resonator in a shape including a ground conductor disposed on the back surface of a dielectric body, and a strip conductor disposed on the top surface thereof, and an even-number mode resonator in such a shape as to be formed when the stub is connected to an end face on the opposite side of the open-end of the strip, characterized in that a dielectric rod having a circular cross section is provided in the space above the respective stubs and another dielectric rod having a circular cross section is provided in the space above the half-wavelength resonator protrusions.

Tunable dual-band resonator

Tunable dual-band band-pass filter

A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3&#xd7;10cmor less, and the impurity concentration of aluminum in the active layer is 1&#xd7;10cmor less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

Semiconductor light emitting device, method of manufacturing same, and optical module

An objective of the present invention is to provide compounds of formula (1) or their pharmacologically acceptable salts or solvates wherein A represents aryl; Rrepresents N-optionally substituted Calkyl-N-optionally substituted Calkylamino-Calkyl; Rrepresents a hydrogen atom or optionally substituted Calkyl; Rrepresents optionally substituted Calkyl or Ccycloalkyl-Calkyl; m is 1 to 3; n is 0; and p is 0 to 2. The compounds are novel lincomycin derivatives that have a potent activity against resistant, which have recently posed problems, in the treatment of infectious diseases. Further, the compounds are usable as antimicrobial agents and are useful for preventing or treating bacterial infectious diseases. 

Lincomycin derivatives and antimicrobial agents comprising the same as active ingredient

An objective of the present invention is to provide compounds of formula (I) or their pharmacologically acceptable salts or solvates wherein A represents aryl while Rrepresents a five- or six-membered monocyclic heterocyclic group, or A represents a four- to six-membered monocyclic heterocyclic group while Rrepresents aryl or a five- or six-membered monocyclic heterocyclic group; Rrepresents a hydrogen atom or Calkyl; Rrepresents Calkyl or Ccycloalkyl-Calkyl; R, R, and Rrepresent a hydrogen atom; Rrepresents Calkyl; and m is 1 to 3. The compounds are novel lincosamide derivatives that have a potent activity against resistant. Further, the compounds are usable as antimicrobial agents and are useful for preventing or treating bacterial infectious diseases. 

Lincosamide derivatives and antimicrobial agents comprising the same as active ingredient

In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600&#xb0; C. or less.

Method for making compound semiconductor and method for making semiconductor device

A compound represented by the following general formula (1): wherein Rrepresents a halogen atom, Rrepresents hydrogen atom or a lower alkyl group, and Rrepresents hydrogen atom, a lower alkyl group, a lower alkoxyl group, a hydroxy lower alkyl group, a halogen atom, or a substituted or unsubstituted amino group, wherein a substituent on the amino group is selected from the group consisting of a lower alkyl group, a lower alkenyl group, a lower alkylcarbonyl group, and an amino protective group, or a salt thereof. The compound of the present invention or a salt thereof is useful as an active ingredient of medicaments for preventive and/or therapeutic treatment of conditions of irritable bowel syndrome and digestive tract functional disorder, or condition of diarrhea.

Benzoxazole derivatives and drugs containing the same as the active ingredient

This invention provides a serotonin 5-HTreceptor partial activator which has a serotonin 5-HTreceptor activating action, in addition to its serotonin 5-HTreceptor antagonism, and does not cause constipation as a side effect. Particularly, based on the finding that newly synthesized benzoxazole derivatives typified by the compounds of the following formula (2) have strong serotonin 5-HTreceptor antagonism and serotonin 5-HTreceptor activating action, this invention provides these benzoxazole derivatives as serotonin 5-HTreceptor partial activators. In the above formula, Rto Rmay be the same or different from one another and each represents a hydrogen atom, a halogen atom, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted lower alkenyl group or a substituted or unsubstituted amino group, or two groups of Rand Rmay be linked together to form a ring structure, namely benzene ring; Rrepresents a hydrogen atom, a substituted or unsubstituted lower alkyl group or a substituted or unsubstituted lower alkenyl group; and m is an integer of 1 to 4.

Serotonin 5-HT3 receptor partial activator

A method of writing data into a memory cell of a non-volatile semiconductor memory device includes setting a write voltage applied to portions of the memory cells depending upon a value of write data, and applying, to a gate electrode, a voltage by which an electric charge is allowed to tunnel through an insulating film on a lower side of a dialectric film that captures the electric charge corresponding to a data value. The amount of electric charge captured is easily and reliably adjusted in order to store desired multi-value digital data, while preventing occurrence of data corruption.

Multi-level type nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.

Method of making multi-level type non-volatile semiconductor memory device

Growing community of inventors

Tokyo, Japan

Yasuo Sato