Murata Manufacturing Co., Ltd.

Renesas Technology Corp.

Hitachi, Ltd.

Yasuo Osone

Chushiro Kusano

Kenji Sasaki

Yasunari Umemoto

Satoshi Sasaki

Isao Ohbu

Yuji Shirai

Tsutomu Kobori

Chiko Yorita

Yu Hasegawa

Seiichi Tomoi

Hirokazu Nakajima

Kenya Kawano

Hiroshi Kikuchi

Naotaka Tanaka

Kazuji Yamada

Hiroyuki Nagai

Takeshi Harada

Masahide Hayashi

Hiroshi Okabe

Masahiro Nagasu

Norio Nakazato

Shigeta Ueda

Hirokazu Inoue

Kengo Suzuki

Hironori Kodama

Teruhisa Akashi

Satoru Konishi

Shizuki Nakajima

Takashi Kubo

Tsuneo Endou

Masaki Asagai

A radio communication device includes a power amplifier having a semiconductor device formed with a plurality of unit transistors. Base electrodes of the unit transistors are connected with each other by a base line, and an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors.

Semiconductor device and radio communication device

A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions, andeach having a first number (e.g., seven) of the unit transistors Q, and transistor formation regionsandeach having a second number (e.g., four) of the unit transistors Q. The transistor formation regionsandare located between the transistor formation regions, and, and the first number is larger than the second number.

In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.

Semiconductor device and manufacturing method thereof

A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions, andeach having a first number (e.g., seven) of the unit transistors Q, and transistor formation regionsandeach having a second number (e.g., four) of the unit transistors Q. The transistor formation regionsandare located between the transistor formation regions, and, and the first number is larger than the second number.

There is provided a physical sensor which ensures long-term reliability and can be miniaturized and increased in density, and a method of producing the same. A physical sensor includes a supporting substrate, an element substrate that includes a sensor element and is joined to the supporting substrate through an insulating layer, a glass cap that covers an area of the sensor element and is joined to the element substrate, and a built-in electrode that is electrically connected to the sensor element. The built-in electrode is formed in a through hole passing through the element substrate, the insulating layer and the supporting substrate. A portion of the glass cap that covers an area of the built-in electrode is anodically bonded to the element substrate.

Physical sensor and method of process

Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.

Semiconductor device

A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions, andeach having a first number (seven) of the unit transistors Q, and transistor formation regionsandeach having a second number (four) of the unit transistors Q. The transistor formation regionsandare located between the transistor formation regions, andand the first number is larger than the second number.

A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.

Acoustic wave filter and manufacturing method of the same

A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.

A method of measuring a thermal resistance of laminated resin sandwiched by a first member and a second member according to the present invention includes measuring, as thermal resistance of resin, a sum of thermal resistance of an interface between the resin and the first member, thermal restistance of an interface between the resin and the second member, and thermal resistance caused by conduction of heat through the resin.

Method of measuring thermal resistance of resin and a measuring apparatus using the method

Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

Growing community of inventors

Kasumigaura, Japan

Yasuo Osone