Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Namco Bandai Games, Ltd.

Namco Limited

Yasuo Ohba

Hiroshi Katsuno

Kei Kaneko

Mitsuhiro Kushibe

Ako Hatano

Shinji Yamada

Masayuki Ishikawa

Toshihide Izumiya

Yukio Watanabe

Hideto Sugawara

Motoyuki Yamamoto

Kazuhiko Itaya

Yoshihiro Kokubun

Jumpei Tajima

Toru Gotoda

Hajime Okuda

Hideo Shiozawa

Johji Nishio

Hidetoshi Fujimoto

Genichi Hatakoshi

Kazuhiro Eguchi

Rei Hashimoto

Keiji Takaoka

Yutaka Uematsu

Shigeya Naritsuka

Akinari Kaneko

Hiroki Nagaoka

Hiroaki Yoshida

Yukie Nishikawa

Noboru Shimoyama

Satoshi Mitsugi

Takao Noda

Aiko Endo

Kentaro Yamaguchi

Yasuo Ashizawa

Masahisa Funemizu

Masahisa Funamizu

Miyoko Watanabe

Niyoko Watanabe

A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer

According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.

Method for manufacturing semiconductor light emitting device

A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.

Semiconductor light-emitting element

A semiconductor light emitting device includes: a stacked structure unit including first and second semiconductor layers and a light emitting layer between the first and second semiconductor layers; a first electrode on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film on the second semiconductor layer and a second film on a rim of the first film. The first film has a relatively lower contact resistance with the second semiconductor layer, compared to the second film. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.

Semiconductor light emitting device and semiconductor light emitting apparatus

According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes AlGaInN having a first Mg concentration. The second layer is provided between the first layer and the p-type semiconductor layer, and includes AlGaInN having a second Mg concentration higher than the first Mg concentration. The third layer is provided between the second layer and the p-type semiconductor layer, and includes AlGaInN having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.

Semiconductor light emitting element and method for manufacturing semiconductor light emitting element

A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

Method for manufacturing semiconductor light emitting apparatus by mounting semiconductor light emitting device having stacked dielectric films having different refractive indexes on mounting member

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.

Semiconductor light emitting device

A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.

Semiconductor light emitting element and semiconductor light emitting device

A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.

Semiconductor light-emitting device and method for manufacturing same

A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlGaN (0.8&#x2266;x&#x2266;1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.

Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer

According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.

Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer

Growing community of inventors

Kanagawa-ken, Japan

Yasuo Ohba