Kabushiki Kaisha Ohara

Yasuo Ochi

Susumu Uehara

Jie Fu

Kazuo Ohara

A glass ceramics having a chemical composition of aRO.bNb.O.cSiO.dBO.eTeO.fX (where R represents Ba and/or Sr, X represents one or more oxide selected from the group consisting of TiO, ZrO, POand ZnO, a&#x3e;b&#x2267;0.05, 0.60&#x2267;c&#x2267;0, 0.70&#x2267;d&#x2267;0, 0.70&#x2267;e&#x2267;0, c+d+e&#x2267;0.175, a+b+c+d+e=1.0 and 0.10&#x2267;f&#x2267;0). The ratio dielectric constant at 1 kHz &#x3b5;to dielectric constant at 100 kHz &#x3b5;(&#x3b5;/&#x3b5;) is 10 or more.

SBN glass ceramics system

Long-lasting phosphorescent glasses and glass-ceramics have a composition containing 30-65 mol % SiO,and 20-50 mol % ZnO as basic ingredients and may also contain, as an activator or an auxiliary activator, 0-5 mol % Ln,O,where L n is an element or elements selected from the group consisting of Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Mn. In one aspect of the invention, long-lasting phosphorescent glass-ceramics have a composition containing 30-70 mol % SiO,, 5-40 mol % MgO and 10-55 mol % MO where M is an element or elements selected from the group consisting of Ca, Sr and Ba as basic ingredients. The composition further includes 0.0001-5 mol % Eu,O,as an activator and 0.0001-6 mol % Ln,O,as an auxiliary activator where Ln is an element or elements selected from the group consisting of Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

Long-lasting phosphorescent glasses and glass-ceramics

There is provided a long-lasting phosphor having a base crystal of {dot over (a)}kermanite crystal structure consisting of R&prime; (where R&prime; is one or more elements selected from the group consisting of Ca, Sr and Ba), Mg, Si, O and N and comprising Eu as an activator and one or more co-activators such as Dy. The long-lasting phosphor is produced by sintering materials including strontium nitrate to grow the base crystal of {dot over (a)}kermanite crystal structure, or by changing a solution containing constituent elements or material in the state of suspension into fine particles of liquid by atomization and thereafter heating the fine particles of liquid in a gas stream under oxidating, neutral or reducing atmosphere. The new Mohs' scale of hardness of the long-lasting phosphor is less than 1. Phosphorescence brightness of the long-lasting phosphor 2 minutes after stoppage of irradiation of illuminance of 1000 lux for 30 minutes with a white fluorescent lamp is 200 mCd/m,or over.

Long-lasting phosphor, powdered long-lasting phosphor and method for manufacturing the powdered long-lasting phosphor

There is provided a long-lasting phosphor being activated by divalent europium and having a chemical composition RO.a(Al,Ga,),O,.bM,O,.cB,O,.dEu,(where R is at least one selected from the group consisting of alkaline-earth metals and Zn, and M is at least one selected from the group consisting of Y, Sc and Si) wherein a, b, c, d and x are within ranges of 0.3&lE;a&lE;8, 0<b&lE;0.2, 0.001&lE;c&lE;0.3, 0.001&lE;d&lE;0.3, and 0&lE;x<1.0.

Long-lasting phosphor

There is provided a long-lasting phosphor activated by divalent europium and having a chemical composition RO.multidot.a(Al.sub.1-x Ga.sub.x).sub.2 O.sub.3 .multidot.b(Y.sub.1-y Sc.sub.y).sub.2 O.sub.3 .multidot.cB.sub.2 O.sub.3 .multidot.dEu.sup.2+ .multidot.eM.sup.n+ (where R is at least one selected from the group consisting of alkaline-earth metals including Ba, Sr, Ca and Mg and Zn, and M is at least one auxiliary activator selected from the group consisting of Nb, Zr, Bi, Mn, Sn, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) wherein a, b, c, d, e, x and y are within ranges of:

A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.

Thermoelectric semiconductor material

A thermoelectric semiconductor material is disclosed. The material comprises a double oxide which contains antimony and has a trirutile crystal structure.

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Kunitachi, Japan

Yasuo Ochi