Nec Corporation

Anelva Corporation

Nihon Koshuha Co., Ltd.

Yasuo Niimura

Tsutomu Tsukada

Seiji Samukawa

Yukito Nakagawa

Hisaaki Sato

Kibatsu Shinohara

This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.

Plasma processing apparatus

Growing community of inventors

Kanagawa, Japan

Yasuo Niimura