Fujitsu Corporation

Tokyo Institute of Technology

Yasuo Nara

Kazuhiro Takahashi

Takashi Ito

Yoshihiro Arimoto

Tetsuro Tamura

Hiroshi Ishihara

Yoshimi Yamashita

Masaomi Yamaguchi

Fumiaki Kumasaka

Hiromasa Hoko

Rinshi Sugino

Koji Aizawa

Kei Horiuchi

Yoshiaki Tabuchi

Satoshi Hasegawa

A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Ferroelectric memory, multivalent data recording method and multivalent data reading method

Several ten thousands or several millions of juxtaposed hollow thin tubes, each having a diameter of, for example, 12 .mu.m and a length of 1 mm, are joined to each other to form a window having a predetermined open surface area. The window having a diameter of, for example, 30 mm, can withstand a differential pressure of several atm. A high-vacuum X-ray source and the window consisting of thin tubes having the aforementioned dimensions are connected through a differential evacuating device having a plurality of stages connected with a partitioning wall having an orifice of predetermined dimensions provided between the adjacent stages. The pressures at the two sides of the window are maintained to the atmospheric pressure and a pressure which is 1/10th of the atmospheric pressure, respectively. X-rays having a long wavelength of 10 .ANG. or above and emitted by a SOR device under a high vacuum can be illuminated on a sample provided in an environment at the atmospheric pressure at a high transmittance and over a wide area which cannot be achieved by a conventional Be window.

X-ray exposure apparatus

A gettering treatment process comprises the step of irradiating an ultraviolet light onto an insulating layer (a silicon oxide thin layer formed by thermally oxidizing silicon), in a chlorine-containing gas atmosphere. The ultraviolet light excites and dissociates the chlorine-containing gas thereby to generate chlorine radicals which uniformly penetrate the insulating layer, and serve to trap metal impurities within the silicon oxide thin layer.

Gettering treatment process

Growing community of inventors

Kawasaki, Japan

Yasuo Nara