Nippon Electric Co., Ltd.

Yasuo Nannichi

Izuo Hayashi

Masayasu Ueno

Hiroo Yonezu

Isamu Sakuma

Katsuhiko Nishida

Tonao Yuasa

Taibun Kamejima

Toshio Uji

A semiconductor laser device in which at least one of the main surfaces of a semiconductor laser crystal body which generates heat during operation is brought into thermal contact with a silicon crystal heat-sink body.

Semiconductor laser device equipped with a silicon heat sink

A strip-geometry semiconductor double-heterostructure laser device includes an n-GaAs substrate on which a first layer of n-Al.sub.x Ga.sub.1-x As and a second layer of p-AlyGa.sub.1-y As are formed by epitaxial growth techniques. A third layer of heat- and Ga melt resistant material of narrow stripe geometry is formed on the second layer. After the second layer and part of the first layer, except for their stripe portions, are meltbacked by Ga melt liquid, a fourth layer of n-Al.sub.z Ga.sub.1-z As is formed by epitaxial growth techniques of the same Ga melt liquid in one process.

Semiconductor double heterostructure laser device and method of making

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Tokyo, Japan

Yasuo Nannichi