Rohm Co., Ltd.

Yasuo Nakanishi

Takao Fujimori

Nobuaki Matsui

Hirotaka Obuchi

Kazuaki Tsutsumi

Yohei Ito

Ryosuke Ishimaru

Masayuki Sonobe

Yasunobu Shoji

Tomohito Kawase

An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Electrode structure and semiconductor light-emitting device

Electrode structure and semiconductor light-emitting device having a high region part and a low region part

A semiconductor light emitting device includes: a semiconductor light emitting element; a sealing resin covering the light emitting element; and a support member including a base and supporting the light emitting element and the sealing resin, the base including a base main surface facing one side of first direction, a base back surface facing the other side of the first direction, a pair of first base side surfaces opposite each other in second direction orthogonal to the first direction, and a pair of second base side surfaces opposite each other in third direction orthogonal to the first and second directions, wherein the support member includes a raised plane raised from the base main surface in the first direction, and wherein the plane is exposed from the sealing resin and includes a portion extending from one edge to the other edge in the third direction when viewed in the first direction.

Semiconductor light emitting device and method of manufacturing the same

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Light emitting device and light emitting device package

A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting elementincludes a substrate, an n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, a transparent electrode layerand a reflective electrode layer, and the transparent electrode layerhas a thickness T satisfying the following expression (1): wherein &#x3bb; is the light-emitting wavelength of the light-emitting element, and n is the refractive index of the transparent electrode layer

Light-emitting element

A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device

The light emitting deviceincludes a substrate, and an n-type conductive type semiconductor layer, a light emitting layerand a p-type conductive type semiconductor layerlaminated in series on a surfaceA of the substrate. The light emitting layer, the p-type conductive type semiconductor layer, and a portion of the n-type conductive type semiconductor layerexcluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion. A p-side transparent electrode layeris formed on a surface of the p-type conductive type semiconductor layer. The p-side transparent electrodecovers a substantially whole area of a predetermined current injection regionon a surface of the p-type conductive type semiconductor layer. A p-side electrodeis formed on a surface of the p-side transparent electrode layer. A plurality of concave portions, which penetrate the p-side transparent electrode layerand enter the semiconductor laminate structure portion, are formed on a surface of the p-side transparent electrode layer

Light emitting device

A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.

Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device

Growing community of inventors

Kyoto, Japan

Yasuo Nakanishi