Semiconductor Energy Laboratory Co., Ltd.

Canon Kabushiki Kaisha

Canon Denshi Kabushiki Kaisha

Kumiai Chemical Industry Co., Ltd.

Other

Fuji Xerox Co., Ltd.

Koito Manufacturing Company, Ltd.

Asahi Kogaku Kogyo Kabushiki Kaisha

Ihara Chemical Industry Co., Ltd.

Mitsui Petrochemical Industries, Ltd.

Hitachi, Ltd.

Fuji Photo Film Company, Limited

Nissan Motor Company Limited

Asahi Kogaku Kogyo K.k.

Konica Minolta, Inc.

Yasuo Nakamura

Shunpei Yamazaki

Jun Koyama

Satoshi Seo

Hideki Uochi

Junpei Sugao

Akiharu Miyanaga

Masahiro Takahashi

Hideyuki Kishida

Hisao Ikeda

Takeshi Nishi

Kengo Akimoto

Hidekazu Miyairi

Junichiro Sakata

Keiko Saito

Yasuyuki Arai

Yukie Suzuki

Yoshitaka Moriya

Tetsuro Kuwayama

Hiroki Yonezawa

Koichiro Tanaka

Masaaki Hiroki

Yoshifumi Tanada

Ryoji Nomura

Osamu Koyama

Hiroko Abe

Satoru Nakamura

Yoshiharu Hirakata

Hiroki Ohara

Takayuki Ito

Tetsuji Ishitani

Yu Yamazaki

Shinichi Suzuki

Hiroki Kato

Noriko Shibata

Takeshige Miyazawa

Takayuki Sensui

Ikuko Kawamata

Shigeyuki Suda

Tomoaki Kawai

Naosato Taniguchi

Hiroshi Matsui

Hiroaki Hoshi

Nobuyuki Kobayashi

Yuji Yamada

Ritsuko Nagao

Kenichi Wakimoto

Atsushi Tokuda

Isao Hashimoto

Hideo Ichikawa

Atsuhiko Ikeda

Katsuya Takahashi

Susumu Katou

Nobuyuki Ohba

Takuji Miyazawa

Takahiko Ryuzaki

Akira Takeuchi

Michiya Hirata

Tsutomu Kawada

Junji Yamamura

Tatsuyodihi Ishida

Hisayoshi Daicho

Makoto Chida

Tetsuya Fujita

Kiyonobu Endo

Masaaki Tokunaga

Nobuo Hyakutake

Fumio Furusawa

Akio Fujii

Nobuyoshi Komatsu

Yoshihiro Enomoto

Hirofumi Matsuo

Keiji Yamamoto

Yasuaki Tomoda

Kenji Matsunari

Yoshio Kogure

Hiroshi Osawa

Akihiro Kohno

Satoru Torimaru

Akitomo Sasaki

Hideo Nakajima

Yoshio Okishi

Masamichi Fujihira

Norihiko Kobayashi

Osamu Endo

Shinji Shiraga

Mikio Yamaguchi

Satoshi Fukada

Koji Soda

Tatsuo Goto

Tatsuo Gotoh

Masato Gomi

Noriaki Ito

Yoshihide Nozaki

Koji Itaba

Hideaki Yano

Uichi Akiba

Chiharu Suzuki

Kazuyoshi Hori

An illumination device irradiates a field of view with pulsed illumination light. In a multi-tap type image sensor, one pixel has a plurality of FD (floating diffusion) regions. A camera controller controls a light emission timing of the illumination device and an exposure timing of the image sensor. A pulse exposure region, which is one of the plurality of FD regions, is allocated to generation of a slice image, and a continuous exposure region, which is another one of the plurality of FD regions, is allocated to generation of a normal image. The image sensor generates the slice image by performing multiple exposure of reflected light of the pulsed illumination light from the field of view using the pulse exposure region, and generates the normal image by performing exposure using the continuous exposure region in a section where the pulse exposure region is not used.

Gating camera, sensing system for vehicle, vehicle lamp

A sterilizing method for sterilizing a sterilization object housed in a chamberincludes an ozone preparation step Sfor filling an inside of a buffer tankwith ozone gas, and an ozone injection step Sfor injecting the ozone gas filled in the inside of the buffer tankinto the chamber

Sterilizing method and sterilizer

A sterilizing method for sterilizing a sterilization object housed in a chamber () includes a first vapor injection step (S) of injecting vapor produced from a first aqueous solution of hydrogen peroxide to the inside of the chamber (), an ozone injection step (S) of injecting ozone gas to the inside of the chamber () after the first vapor injection step (S), and a second vapor injection step (S) of injecting vapor produced from pure water or vapor produced from a second aqueous solution of hydrogen peroxide to the inside of the chamber () after the ozone injection step (S).

By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Semiconductor device and method for manufacturing the same

A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material. Further, reaction between electrodes of the light emitting elements (cathodes or anodes) and the sealing materials can be prevented by covering the electrodes with a transparent protective layer for example, CaF, MgF, or BaF.

Light emitting device and method of manufacturing the same

The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.

Light emitting device

It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Semiconductor device including oxide semiconductor layer

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

Method for manufacturing semiconductor device

In image data obtained, the radius and the ulna, and interosseous soft tissue between two bones are identified. A midpoint (Ygk) of the length of the interosseous soft tissue in a Y axis direction in (Xk) coordinates is determined. This midpoint is determined in multiple coordinates, and an approximate straight line of these midpoints is determined and set as a reference line. The foot of the perpendicular from the ulna styloid process to the reference line is set as a reference position. A region of interest is set in a position at a predetermined distance from the reference position along the reference line.

Bone density measuring device

A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material. Further, reaction between electrodes of the light emitting elements (cathodes or anodes) and the sealing materials can be prevented by covering the electrodes with a transparent protective layer, for example, CaF, MgF, or BaF.

Arrangement of sealing materials for display device

Growing community of inventors

Tokyo, Japan

Yasuo Nakamura