Mitsubishi Denki Kabushiki Kaisha

Yasuo Nakajima

Yasuaki Yoshida

Hirofumi Namizaki

Yasushi Sakakibara

Masao Aiga

In a method of fabricating semiconductor laser chips using a circular semiconductor wafer, an orientation flat is formed at a part of the peripheral side surface of the semiconductor wafer so that an alignment error of the orientation flat from a crystalline axis of the semiconductor wafer is within.+-.0.04.degree.. Therefore, the processing precision in fabricating semiconductor laser chips using the circular wafer is improved.

Method of fabricating semiconductor laser

A semiconductor laser array device includes a semiconductor laser chip array including a plurality of laser chips each having a prescribed chip width mounted on a bar-shaped supporting substrate and arranged parallel to a length direction of the substrate and determined in position in the optical axis direction of the laser chip and in the length and height directions of the substrate; a monitor photodiode array including a plurality of monitor photodiodes arranged in an array with the same period as that of the laser chip array mounted on the substrate and arranged parallel with the length direction of the substrate and determined in position in the optical axis direction of the laser chips and in the length direction and the height direction of the substrate; a plurality of lenses mounted on the substrate arranged in the length direction of the substrate with the same period as that of the laser chip array, the lens positions being determined in the optical axis direction of the laser chip and in the length direction and the height direction of the substrate. A respective laser chip, monitor photodiode, and lens constitute an individual semiconductor laser device. The distance between the semiconductor laser chip and the monitor photodiode are determined with high precision.

Semiconductor laser array device, semiconductor laser device, and

An optical amplifier apparatus which amplifies a signal light in an optical fiber includes an optical fiber having a core containing a rare-earth dopant element and an excitation light source including a semiconductor laser for generating excited light and an optical amplifier utilizing a semiconductor laser for amplifying the excited light and supplying the amplified excited light to the optical fiber.

Optical fiber amplifier apparatus

A method for producing a semiconductor laser of InGaAsP/InP type having a structure, in which an active layer isolated from outside is embedded in a groove in a substrate wafer, which comprises steps of: forming the groove in the substrate having a crystallographic plane of (100), on the upper surface of which a current blocking layer has been formed, along the &lt;011&gt; direction of the substrate, in a manner to be terminated at both sides of substrate wafer in the vicinity of the end faces of a laser resonator; and, thereafter, sequentially forming on the groove and other regions of the substrate clad layers and the active layer.

Growing community of inventors

Itami, Japan

Yasuo Nakajima