Sanyo Electric Co., Ltd.

Other

Sony Corporation

Yasuo Nakahara

Kiyoshi Yoneda

Tsutomu Yamada

Hiroshi Nonoue

Kikuko Kato

Satoshi Ishida

Masaaki Nemoto

Yasushi Shimogaichi

Hiroyuki Kuriyama

Mamoru Kimoto

Takashi Umemoto

Hiroki Hamada

Naoya Sotani

Yoichiro Aya

Hisashi Abe

Koji Endo

Tomoyuki Nouda

An electric double layer capacitor comprises an electrode, a current collector, an electrolyte, a separator, a concave-shaped container for accommodating them, and a sealing plate for sealing an opening part of the container, wherein the sealing plate is fitted inside the container. By having a structure fitting the sealing plate inside an opening part of the concave-shaped container, the positioning between the sealing plate and the container becomes easy, and the displacement of the sealing plate in the horizontal direction can be reduced. Thus, the decline of the yield can be prevented.

Electric double layer capacitor with a sealing plate fitted inside a container

An electrochemical device includes a pair of electrodes at least containing activated carbon powder, a separator interposed between the pair of electrodes, and an electrolytic solution impregnated into the pair of electrodes and the separator. The electrodes and the separator are stacked on a collector. Each of the electrodes includes at least two layers arranged in a thickness direction, and the two layers are made of the activated carbon powder having mutually different average grain sizes. The average grain size of the activated carbon powder in the layer contacting the separator is greater than the average grain size of the activated carbon powder in the layer located on the collector side.

Electrochemical device

The present invention provides an electric double layer capacitor that has less chance for internal resistance increase. For this objective, in this electric double layer capacitor, an electric double layer capacitor element sandwiches a separator between a cathode and an anode, arranged inside a container comprising a lid and a concave shaped containing portion. On the inner bottom face in the containing portion, an insulating layer having a first conductive layer connected to a connecting terminal, and an opening portion penetrates to the first conductive layer are formed, wherein a second conductive layer fills inside the opening portion. Onto the insulating layer and the second conductive layer, a third conductive layer which laminates a first layer comprised of aluminum and a second layer comprised of carbon, is formed and connected to the cathode. The fourth conductive layer is connected to the anode, and also connected to the connecting terminal.

Electric double layer capacitor

A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.

Method of manufacturing a semiconductor device

A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.

Thin film transistor and method of fabricating the same

Growing community of inventors

Hirakata, Japan

Yasuo Nakahara