Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Yasuo Matsuoka

Kaoru Kanda

Michirou Takano

Kenichi Taniyama

Katsuhisa Mita

Tsuneo Akasaki

Hiroshi Nomura

Ryoichi Inanami

Takumi Ota

Kinya Usuda

Takashi Tsuchiya

Hiroyuki Hasebe

Masayuki Suzuki

Noboru Yamamoto

Masahito Hiroshima

Michiro Takano

An imprint apparatus according to one embodiment includes a contact processing unit and a defect determination unit. The contact processing unit brings a template pattern formed on a front surface of a template into contact with resist placed on a substrate. The defect determination unit determines a defect in an imprint process, on the basis of force which is generated from at least one of the template, the resist, and the substrate, during the imprint process.

Imprint apparatus and imprint method

According to one embodiment, a plurality of test drop recipes are first created based on design data on a semiconductor integrated circuit. Based on a defect inspection result of a pattern of a hardening resin material, which is formed by pressing a template on which patterns of the semiconductor integrated circuit are formed onto the hardening resin material applied to a substrate to be processed by use of the test drop recipes, a drop recipe with least defects is selected per press position on the substrate to be processed from the test drop recipes. The selected drop recipes for respective press positions are collected per functional circuit block configuring the semiconductor integrated circuit, thereby to generate a drop recipe creation assistant database.

Drop recipe creating method, database creating method and medium

According to one embodiment, a neuron learning type integrated circuit device includes neuron cell units. Each of the neuron cell units includes synapse circuit units, and a soma circuit unit connected to the synapse circuit units. Each of the synapse circuit units includes a first transistor including a first terminal, a second terminal, and a first control terminal, a second transistor including a third terminal, a fourth terminal, and a second control terminal, a first condenser, one end of the first condenser being connected between the second and third terminals, and a control line connected to the first and second control terminals. The soma circuit unit includes a Zener diode including an input terminal and an output terminal, the input terminal being connected to the fourth terminal, and a second condenser, one end of the second condenser being connected between the fourth terminal and the input terminal.

Neuron learning type integrated circuit device using a plurality of synapses, a soma, transistors, a zener diode, and condensers

A photomask substrate, which is formed in a rectangular shape and on the surface of which photoresist is applied, is located above a lower heating plate so as to be separated from the lower heating plate by a proximity distance. The lower heating plate is provided with a heat unifying ring fixedly arranged thereon so as to surround the photomask substrate. The periphery of the heat unifying ring is provided with a taper section tapered at a predetermined angle to the periphery. The heat unifying ring has a container for containing the photomask substrate, at the central portion. An upper heating plate is arranged above the lower heating plate. The upper heating plate is provided with a baking chamber thereabove to cover the entire portion of the baking chamber section, thereby the baking chamber section can be shielded from the outside and free from the influence of the outside.

Method for baking photoresist applied on substrate

Apparatus for baking photoresist applied on substrate

Creation of a resist pattern through chemical development of a resist layer which has been subjected to a patternmaking process such as selective exposure to electromagnetic rays or drawing with an electron beam. A workpiece, having the resist layer formed on an electroconductive surface of a substrate, is dipped in a bath of developing liquid at a first temperature. During the progress of the development the magnitude of an electric current flowing between the conductive surface of the workpiece and an electrode also immersed in the bath is constantly monitored in order to determine a moment at which the withdrawal of the developing liquid from the vessel is to be commenced. Upon commencement of the liquid withdrawal from the vessel, an additional amount of developing liquid is charged into the vessel at a second temperature lower than the first temperature. The progress of development during the liquid withdrawal is thus retarded in order to assure a sufficient length of time for the recovery of the used liquid for recirculation.

Method and apparatus for creation of resist patterns by chemical

An improvement in an automatic developing apparatus in which an electroconductive body upon which a predetermined pattern has been written on a resist film applied to a surface of that body, is placed in a solution of developer and containing an electrode, and then the value of the change of the current that flows between the electroconductive body and the electrode is used as the basis for then determining the point at which developing of the written pattern is completed is disclosed. The automatic developing apparatus comprises

Automatic developing apparatus

Creation of a resist pattern through chemical development of a resist layer which has been subjected to a patternmaking process such as selective exposure to electromagnetic rays or drawing with an electron beam. A workpiece, having the resist layer formed on an electroconductive surface of a substrate, is dipped in a bath of developing liquid at a first temperature. During the progress of the development the magnitude of an electric current flowing between the conductive surface of the workpiece and an electrode also immersed in the bath is constantly monitored in order to determine a moment at which the withdrawal of the developing liquid from the vessel is to be commenced. Upon commencement of the liquid withdrawl from the vessel, an additional amount of developing liquid is charged into the vessel at a second temperature lower than the first temperature. The progress of development during the liquid withdrawal is thus retarded in order to assure a sufficient length of time for the recovery of the used liquid for recirculation.

A liquid state resist is dropped to form a coating on a semiconductor substrate mounted on a rotary chuck disposed in a resist coating vessel in which a sealed solvent vapor atmosphere is created. An adjusting plate is provided in the coating vessel above the rotary chuck in a stationary or movable manner to weaken or substantially reduce a swirly flow of the solvent vapor which tends to occur in the coating vessel when the chuck is rotated. Thus a substrate coated with a resist film of uniform thickness is obtained.

Resist coating apparatus

A hot plate and temperature-holding plate are set in a vacuum chamber. A blank mask is taken into the vacuum chamber through an inlet port. The blank mask is placed on the hot plate. The interior pressure of vacuum chamber is reduced to a level ranging between 0.1 torr and 0.9 torr. Under this condition the blank mask is baked at a temperature of 100.degree. C..+-.5.degree. C. for 3 minutes. After the baking is brought to an end, the blank mask is carried by walking beams from the surface of the hot block to the surface of the temperature-holding plate. The blank mask is cooled to approximately room temperature on the temperature-holding plate. When the blank mask reaches the predetermined temperature level, a plasma is generated by a high frequency power source between the electrode plate, set above the blank mask and temperature-holding block, for the predetermined length of time, thereby descumming the blank mask.

Apparatus for forming a resist pattern

This invention is described an automatic developing device. The automatic developing device according to this invention is comprising: a stage on which the substrate to be treated is disposed after application of the resist and the patterning step is complete; a sealed frame capable of movement, that is used to sealingly cover the substrate disposed on this stage; a supply pipe for supplying developer into this sealed frame; a treatment vessel in which installs the stage, the sealing frame and the developer supply pipe; and at least one nozzle which sprays rinsing liquid provider in this treatment vessel.

Automatic developing device

A resist is coated on a photomask and a predetermined pattern is exposed on the resist. The photomask is dipped in a developing solution together with an electrode which exhibits a stable potential in the developing solution, so that a change in current flowing between the photomask and the electrode is detected on the basis of a change in capacitance between the photomask and the developing solution, while developing the pattern formed on the resist. The current abruptly changes (e.g., exhibits its peak) around the time at which the resist is removed and a chromium underlying layer of the photomask is exposed. The time obtained by multiplying the time until the change appears by a predetermined coefficient is regarded as the time corresponding to the end of the developing step.

Pattern developing process and apparatus therefor

An automatic developing apparatus comprises a developing tank and a pipe for introducing a developing solution into the developing tank. The developing tank is constituted by a stage on which a substrate is to be set, and a processing case movable relative to the stage, to receive said stage.

Growing community of inventors

Kawasaki, Japan

Yasuo Matsuoka