Jsr Corporation

Japan Synthetic Rubber Co., Ltd.

Japan Science and Technology Agency

Other

Seiko Epson Corporation

Sharp Corporation

Hitachi High-tech Science Corporation

Jrs Corporation

International Center for Materials Research

Japan Synthetic Rubber Co., Ltd., a Japanese Corporation

Yasuo Matsuki

Yasumasa Takeuchi

Tatsuya Sakai

Tatsuya Shimoda

Masayuki Kimura

Masahiro Furusawa

Michinori Nishikawa

Yasuaki Yokoyama

Tsuyoshi Miyamoto

Kyouyu Yasuda

Hitoshi Kato

Ichio Yudasaka

Satoru Miyashita

Haruo Iwasawa

Sachiko Hashimoto

Shigeo Kawamura

Shunichi Seki

Hiroshi Shiho

Satoshi Ebata

Tsukasa Toyoshima

Ryo Kawajiri

Toshihiro Ogawa

Shin-ichi Kimura

Zhongrong Shen

Kengo Wakabayashi

Takashi Aoki

Masayuki Endo

Takashi Masuda

Anto Yasaka

Kazuki Kobayashi

Yoshihiro Hosaka

Hiroharu Ikeda

Hideki Nishimura

Yoshihiro Koyama

Naoshi Yasuda

Tomotaka Shinoda

Ikuo Sakono

Kouji Sumiya

Shoichi Nakata

Isamu Yonekura

Yoichiro Maruyama

Yasumasa Kateuchi

Hiroyuki Hiraoka

Yutaka Makita

Tetsuo Tominaga

Yosinobu Kariya

Hideki Chiba

Hisao Igarashi

Hiroyuki Hirasawa

Kentaro Tamaki

Minako Kobayashi

Yasuaki Mutsuga

Osamu Kose

Keiichi Yamamoto

Kazuhiro Eguchi

Daohai Wang

A binder composition for an electrode of an electric storage device is provided. The binder composition comprises (A) at least one polymer selected from the group consisting of polyamic acids and imidized polymers thereof having an imidization rate of 50% or less and (B) water. The ratio Ma/Mb of the content of the polymer (A), Ma (parts by mass), to the content of the water (B), Mb (parts by mass), ranges from 500 to 5,000. The binder composition for an electrode of the present invention provides an electric storage device having a large charge/discharge capacity and a low degree of capacity degradation due to repetition of a charge/discharge cycle.

Binder composition for electrode of electric storage device

The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of:

Method for forming crystalline cobalt silicide film

The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120&#xb0; C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Method for forming patterned conductive film

A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source, a condenser lens electrode, a blanking electrode, a scanning electrode, a sample stageon which a sampleis mounted, a secondary charged particle detectorthat detects a secondary charged particlegenerated from the samplein response to the charged particle beam irradiation, a reservoirthat accommodates cyclopentasilane as a source gas, and a gas gunthat supplies the source gas to the sample

Charged particle beam apparatus, thin film forming method, defect correction method and device forming method

A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Container containing a cobalt carbonyl complex and cobalt carbonyl complex composition

A composition containing a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. Method of manufacturing a film-coated substrate using the high order silane composition.

High order silane composition and method of manufacturing a film-coated substrate

A composition for forming an aluminum film, comprising a complex represented by the following formula (1) and a complex represented by the following formula (2), the molar ratio of the complex represented by the following formula (1) and the complex represented by the following formula (2) being 40:60 to 85:15:AlH.NRRR&#x2003;&#x2003;(1)AlH.(NRRR)&#x2003;&#x2003;(2)(in the above formulas (1) and (2), R, Rand Rare each independently a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or aralkyl group.).

Composition and method for forming an aluminum film

A trench embedding method comprising the steps of According to this method, even when aluminum is embedded into trenches having a fine and complex pattern, embedding performance is high and trenches in a large substrate can filled. This method can be carried out at a low cost.

Trench filling method

There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.

Composition for forming silicon-cobalt film, silicon-cobalt film and method for forming same

There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Composition for forming silicon film and method for forming silicon film

A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition. The ruthenium compound as a material for chemical vapor deposition is represented by the following formula (1), for example 

Ruthenium compound and process for producing a metal ruthenium film

It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

High order silane composition, and method of forming silicon film using the composition

A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula:wherein R, Rand Rare each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, A high-quality ruthenium film even when it is very thin can be obtained.

Chemical vapor deposition material and chemical vapor deposition

There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film. A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.

Conductive film forming composition, conductive film, and method for forming the same

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Tokyo, Japan

Yasuo Matsuki