Kabushiki Kaisha Toshiba

Yasuo Kohsaka

Takashi Ishigami

Koichi Watanabe

Mitsushi Ikeda

Michio Sato

Yukinobu Suzuki

Toshihiro Maki

Yoshiharu Fukasawa

Yoshiko Tsuji

Takashi Watanabe

Naomi Fujioka

Kenya Sano

Hitoshi Aoyama

Yoichiro Yabe

A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within &#xb1;30% as a whole target. Dispersion of the oxygen content is within &#xb1;80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.

Sputtering target

A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700&#xb0; C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5&#xb0; C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900&#xb0; C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.

Tungsten sputtering target and method of manufacturing the target

A Mo&#x2014;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&#x2014;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&#x2014;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&#x2014;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&#x2014;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&#x2014;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film

A sputter target is made of a Ti&mdash;Al alloy containing Al in the range of 1 to 30 atm %. In the Ti&mdash;Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti&mdash;Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti&mdash;Al&mdash;N film as a barrier film is formed by using the sputter target made of the Ti&mdash;Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.

Sputter target, barrier film and electronic component

A Mo&mdash;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&mdash;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&mdash;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&mdash;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&mdash;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&mdash;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for

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Yokohama, Japan

Yasuo Kohsaka