Denso Corporation

Yasuo Kitou

Hiroki Watanabe

Naohiro Sugiyama

Kensaku Yamamoto

Atsuto Okamoto

Kouki Futatsuyama

Yukihiko Watanabe

Masahiro Sugimoto

Eiichi Okuno

Narumasa Soejima

Hidefumi Takaya

Mitsuhiro Kataoka

Kazukuni Hara

Masami Naito

Nobuo Kamiya

Hiroyuki Kondo

Shoichi Onda

Toshihiko Tani

Tsuyoshi Ishikawa

Jun Kojima

Takamasa Suzuki

Yasushi Furukawa

Eiji Kitaoka

Masanori Nagaya

Emi Makino

Atsuto c/o KK Toyota Chuo Kenkyusho Okamoto

A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defined as b, which satisfies an equation of b&#x3e;&#x3c;0001&#x3e;+1/3&#x3c;11-20&#x3e;. The L dislocation has a density equal to or lower than 300 dislocations/cm, preferably, 100 dislocations/cm, since the L dislocation has large distortion and causes generation of leakage current. Thus, the silicon carbide single crystal with high quality is suitable for a device production which can suppress the leakage current.

Silicon carbide single crystal and method for producing silicon carbide single crystal

In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (-) plane and a (-) plane, where n is any integer number greater than or equal to 0, is prepared. An epitaxial layer having a predetermined impurity concentration is grown on the one of the (-) plane and the (-) plane of the silicon carbide substrate by a chemical vapor deposition method so that a threading dislocation is discharged from a side surface of the epitaxial layer. A silicon carbide single crystal is grown into a bulk shape by a sublimation method on the one of the (-) plane and the (-) plane of the epitaxial layer from which the threading dislocation is discharged.

Method of manufacturing silicon carbide single crystal

A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal.

Device for manufacturing sic single crystal and method for the same

A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

Manufacturing method of silicon carbide single crystal

A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device

A method for manufacturing a SiC single crystal from a SiC seed crystal is provided. The method includes the steps of: measuring a diameter of the SiC single crystal during a crystal growth of the SiC single crystal; and controlling the diameter of the SiC single crystal to be a predetermined diameter on the basis of the measured diameter. The method provides the SiC single crystal with high quality and large size.

Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal

A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.

Equipment and method for manufacturing silicon carbide single crystal

A plurality of grooves are formed in a SiC substrate consisting of an n.sup.- -type epitaxial layer and a p-type epitaxial layer layered on the surface of an n.sup.+ -type monocrystalline SiC semiconductor substrate. These grooves are formed in a grid on the SiC substrate. Heat treatment is then carried out to straighten warp of the SiC substrate caused by the growth of the epitaxial layers.

Semiconductor substrate and method for straightening warp of

In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.

Method of producing single crystals and a seed crystal used in the method

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Okazaki, Japan

Yasuo Kitou