Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Other

Osaka University

Ngk Insulators, Inc.

Ricoh Company, Ltd.

Toyoda Gosei Co., Ltd.

Yusuke Mori

Yasuo Kitaoka

Kazuhisa Yamamoto

Kiminori Mizuuchi

Makoto Kato

Isao Kidoguchi

Hisashi Minemoto

Fumio Kawamura

Takatomo Sasaki

Ken'ichi Kasazumi

Kenichi Nishiuchi

Yasuhito Takahashi

Akihiko Ishibashi

Tomoaki Uno

Toshifumi Yokoyama

Makoto Iwai

Akihiro Morikawa

Hidenori Wada

Yoshiaki Hasegawa

Kenichi Kasazumi

Katsuhiko Kumagawa

Masanori Morishita

Katsuhiro Imai

Masashi Yoshimura

Seiji Nagai

Hiromu Kitaura

Hidekazu Umeda

Shinichi Takigawa

Hiroyoshi Yajima

Shuhei Higashihara

Keiji Ito

Takayuki Sato

Minoru Kawahara

Ken Ichi Kasazumi

Tosifumi Yokoyama

Norihisa Mino

Shigeru Furumiya

Hiromichi Ishibashi

Hiroyuki Yamaguchi

Takeshi Inoue

Shiro Yamazaki

Takayuki Takeuchi

Mikiya Ichimura

Seiji Sarayama

Hirokazu Iwata

Masahiro Kume

Ayumu Tsujimura

Takayuki Negami

Osamu Yamada

Shinji Iio

Kouichi Takamine

Yasutoshi Kawaguchi

Mamoru Imade

Takaaki Hirata

Hisashi Senga

Takashi Satoh

Yasuhide Yakushi

Takeshi Hatakeyama

Kouichi Hiranaka

Toshimi Nishiyama

Kimihiko Shibuya

Fumihiro Sogawa

Naoya Miyoshi

Yasunori Kai

Kazuyoshi Tsukamoto

Jisashi Minemoto

A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.

Nitride crystal and method for producing the same

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Group-III element nitride crystal producing method and group-III element nitride crystal

Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

Method for growing single crystal of group III metal nitride and reaction vessel for use in same

A nitride single crystal is produced on a seed crystal substratein a melt containing a flux and a raw material of the single crystal in a growing vessel. The meltin the growing vesselhas temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

Method for manufacturing nitride single crystal

An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal. The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

N-type group III nitride-based compound semiconductor and production method therefor

An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Method for producing group III nitride semiconductor

A 2-dimensional beam scan unit reflects emission beams from a red laser light source, a green laser light source and a blue laser light source and scans in a 2-dimensional direction. Diffusion plates diffuse the respective light beams scanned in the 2-dimensional direction to introduce them to corresponding spatial light modulation elements. The respective spatial light modulation elements modulate the respective lights in accordance with video signals of the respective colors. A dichroic prism multiplexes the lights of the three colors after the modulation and introduces the multiplexed lights to a projection lens so that a color image is displayed on a screen. Since the 2-dimensional light emitted from the beam scan unit is diffused to illuminate the spatial light modulation element, it is possible to change the optical axis of the beam emerging from the light diffusion member for irradiating the spatial light modulation element moment by moment, thereby effectively suppressing speckle noise.

Method and device for converting an emission beam from a laser light source into 2-dimensional light

An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2&#xd7;10to 2&#xd7;10cm. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.

Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate

A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG., a non-polar surface can be grown.

GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus

2-dimensional image display device or illumination device for obtaining uniform illumination and suppressing speckle noise

A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

Light source, optical pickup, and electronic apparatus

An image display device and an image display system which can establish visible light communication without interfering with an image displayed at a predetermined frame rate are provided. A controller controls a spatial light modulator in accordance with an image signal to display the image, and also modulates an intensity of a visible light output from a backlight with a frequency higher than the frame rate of the image signal to have the visible light output from the backlight carry additional information. A light receiver receives the visible light and demodulates to extract the additional information. An additional information generator outputs the additional information.

Image display device and image display system

The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (), a transducer part (), and an acoustooptic medium (). A high-frequency signal input from the high-frequency signal input part () is converted into a mechanical vibration by the transducer part (), and an optical characteristic of the acoustooptic medium () varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.

Acoustooptic device and optical imaging apparatus using the same

An image display device and an image display system which can establish visible light communication without interfering with an image displayed at a predetermined frame rate are provided. A controllercontrols a spatial light modulator in accordance with an image signal to display the image, and also modulates an intensity of a visible light output from a backlightwith a frequency higher than the frame rate of the image signal to have the visible light output from the backlightcarry additional information. A light receiverreceives the visible light and demodulates to extract the additional information. An additional information generatoroutputs the additional information.

A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in.

Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby

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Ibaraki, Japan

Yasuo Kitaoka