Olympus Optical Company, Ltd.

Yasuo Isono

Yoshiyuki Mimura

Akitoshi Toda

Hiroshi Kajimura

Toshihito Kouchi

Hiroko Ohta

Ryouhei Shimizu

Hiroshi Nakano

Masamichi Morimoto

Yoshiyuji Mimura

A plurality of memory cells are constituted by a large number of belt-like first conductive members, a ferroelectric thin film formed on the first conductive members, and a large number of belt-like second conductive members formed on the film in a direction perpendicular to the first conductive members. A reading/writing section performs a reading/writing operation with respect to each memory cell after applying a predetermined voltage to at least memory cells other than a target memory cell to cause ferroelectric polarization corresponding to crosstalk components. A two-terminal switch integrally stacked on each of the memory cells serves to reduce dielectric polarization for the elimination of crosstalk caused in each memory cell.

Ferroelectric memory device with crosstalk protection in reading/writing

According to this invention, there is provided a memory element and a matrix memory cell array including memory cells each having a nonlinear conductivity bipolar switching element constituted by a multi-layered structure which performs writing/reading operations of a polarization state of a ferroelectric body, i.e., a recording medium of the memory cell, as data and which is constituted by an insulating layer of a predetermined-thickness Langmuir-Blodgett film using most of a switching drive current as a direct tunnel current and conductive layers formed on both the surfaces of the insulating layer.

Memory device

A scanning tunneling microscope memory apparatus comprises first and second integrated circuit (IC) substrates. First and second cantilevers, which can be moved by piezoelectric elements, are arranged on the first and second IC substrates, respectively. Tunnel current probes are provided on a free end of the first cantilever, and a recording element is provided on a free end of the second cantilever. The first and second cantilevers are spaced from each other and overlap such that the tunnel current probes face the recording element. The first or second substrate includes a charge coupled device (CCD) circuit, a control circuit for controlling the CCD circuit and cantilevers, and a drive circuit having a preamplifier, a write circuit, and a servo circuit.

Memory apparatus using tunnel current techniques

A memory device includes a nonlinear electric conductivity element, a charge accumulation element, and a switching element. The nonlinear electric conductivity element has an insulating layer having opposite surfaces, and first and second conductive layers respectively formed on the opposite surfaces of the insulating layer. The nonlinear electric conductivity element receives an external write signal applied to one of the first and second conductive layers, and outputs a signal having nonlinear electric conductivity characteristics from the other of the first and second conductive layers. The charge accumulation element has charge accumulation characteristics and is connected to receive and store the signal output from the other of the first and second conductive layers. The switching element is ON/OFF-controlled upon reception of the signal charge stored in the charge accumulation element. The switching element receives an external read voltage to read out the signal charge stored in the charge accumulation element as storage data. A memory apparatus includes a plurality of memory devices each having the nonlinear electric conductivity element the charge accumulation element and the switching element. The plurality of memory devices are connected in a matrix form such that the switching elements in at least two memory devices can commonly receive the read voltage and can commonly read out the storage data.

Memory device and memory apparatus using the same suitable for neural

An apparatus for forming a predetermined circuit pattern on a circuit substrate by using a .mu.-STM write head, the .mu.-STM write head comprising a write head substrate having a flat surface, a plurality of micro chip electrodes formed upright on the flat surface of the write head substrate and constituting a .mu.-STM, a level of a distal end of each of the chip electrodes being set to be constant, and scanning means for scanning the micro chip electrodes on the circuit substrate by moving the micro chip electrodes and the circuit substrate relative to each other in two-dimensional directions.

Circuit pattern forming apparatus using MU-STM

A micro scanning tunneling microscope ('STM') arithmetic circuit device comprises an information-rewritable micro STM recording medium and a micro STM recording apparatus which temporarily stores information on the recording medium such that the information can be read as a variation in a tunnel current. The recording apparatus has a probe (probes) for writing/reading information on the recording medium and a scanner for varying a relationship in position between the probe and the recording medium. The micro STM recording apparatus uses a recording medium having a specific format as the micro STM recording medium in which recorded information is read as a variation in a tunnel current. That is, the recording medium has an address area in which address information is recorded and a data area in which data information is recorded.

Apparatus including atomic probes utilizing tunnel current to read,

A memory device comprises a base plate with a memory element supporting layer, a probe with a pointed tip portion, and a fine scan element for causing the probe to scan over the surface of the memory element supporting layer. When the probe is approached to the surface of the memory element supporting layer and a suitable bias voltage is applied across the probe and the memory element supporting layer, a tunnel current is cause to flow therebetween and a specific region of the surface of the supporting layer is excited. The excited region can adsorb one molecule of, for example, di-(2-ethylhexyl)phthalate. By causing the memory element to be adsorbed selectively on the memory element supporting layer, data is recorded in the form of a projection-and-recess pattern. The recorded data can be read out by observing the surface configuration of the supporting layer in accordance with the principle of an STM (scanning tunneling microscope).

A data storage apparatus includes a first lever body having a piezoelectric driving section, and a second lever body which is disposed to separate from and to be perpendicular to the first lever body, and has a piezoelectric driving section. A recording medium is formed on a portion of the second lever body, and records desired data. A plurality of probes are disposed on a portion of the first lever body to oppose the recording medium at a predetermined interval, and detect a change in state at predetermined positions on the recording medium as a change in tunnel current or a change in three-dimensional pattern. A voltage applying circuit alternately applies predetermined voltages to the piezoelectric driving sections of the first and second lever bodies to separately drive the plurality of probes in different directions, thereby three-dimensionally scanning the recording medium.

Tunnel current data storage apparatus having separate lever bodies

A three-dimensional memory element comprises a multilayer tunnel switch portion formed by alternately stacking conductive films and insulating films, both the ends of the switch portion consisting of insulating films, a write electrode formed on the insulating film as one end of the multilayer tunnel switch portion, a read electrode formed on the insulating film as the other end of the multilayer tunnel switch portion, and charge accumulating capacitors respectively connected to the conductive films of the multilayer tunnel switch portion.

Three-dimensional memory element and memory device

A thin-film electroluminescence device comprises a plate-like transparent electrode formed on a transparent substrate. A first insulating layer is formed on the transparent electrode. A second insulating layer is mounted on an electroluminescent layer made of ZnS:Mn and formed on the first insulating layer. A plate-like back electrode is provided on the second insulating layer. The first and second insulating layers are each made of gadolinium oxide of a purity level of over 99.9% and have a thickness of 0.05 to 0.8 .mu.m.

Thin-film EL device

An array of light emitting elements comprises an insulating substrate, a dot anode array including a multitude of dot anodes defined by conductors and phosphors formed on the substrate, a thermionic emission cathode disposed in opposing relationship with the dot anode array, and a grid interposed between the cathode and the dot anode array. An accelerating electric field is selectively established between the dot anodes and the cathode to excite the phosphors on the dot anodes with low speed electron beams, thus causing the phosphors to emit light. The array is primarily used in an electrophotographic printer.

Array of light emitting elements for electrophotographic printer

A duplicating apparatus including a charge retentive drum arranged rotatably, an electrostatic latent image forming device, a non-contact type developing device, a transferring device for transferring a toner image onto a record paper and a fixing device for fixing the toner image onto the record paper. A correction electrode is provided between the developing device and transferring device and an AC bias voltage is applied to the correction electrode to generate a vibrating electric field. Image quality of the duplicated copies can be improved by passing the toner image through the vibrating electric field.

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Fussa, Japan

Yasuo Isono