Denso Corporation

Nippondenso Co., Ltd.

Yasuo Ishihara

Toshihiro Miyake

Takeshi Miyajima

Yoshifumi Okabe

Naoto Okabe

Kenji Kondo

Haruo Kawakita

Kenji Ochi

Ichiharu Kondo

Bahman Hossini Soltani

Hajime Soga

Manabu Tomisaka

Yoshikazu Sakano

Shinji Mukota

Tetsuji Yamaguchi

Shusaku Nakazawa

Kazufumi Aoki

Yuya Kato

Naoki Maruno

Kyohei Kotake

Shuichi Nagahaka

Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.

Surface processing apparatus and surface processing method for SiC substrate

A composite material includes a metal material having conductivity and an oxidation inhibitor mixed with the metal material. The oxidation inhibitor forms a complex with the metal material to exert a resistance to oxidation of the metal material. For example, the composite material is formed on a surface of a base material as a plating material. As another example, the composite material is plated on a surface of an electrode.

Composite material, method for forming the composite material, electrode plated with the composite material, and connection structure having the composite material

Metallic films are formed on a silicon substrate on which an insulation film and a conductive portion are exposed. The metallic films include a first metallic film directly contacting the insulation film and the conductive portion and a second metallic film disposed on the first metallic film as a stress adjustment film to control a stress at an interface between the first metallic film and the underlying member. Accordingly, an adhesion between the first metallic film and the insulation film can be controlled to be smaller than that between the first metallic film and the conductive portion. Then, the metallic film is removed from the insulation film by an adhesive sheet selectively while remaining on the conductive portion. As a result, the metallic film can be patterned stably and readily at low cost.

Method for forming and patterning film

A process for dry etching a silicon substrate, in which a mask exposing a region of the surface of the silicon substrate is formed, and the exposed region is dry etched. The dry etching is performed with a gas mixture including chlorine or a chlorine-containing gas, an oxygen-containing gas, and a fluorine-containing gas in which a ratio of a flow rate of oxygen gas to a flow rate of chlorine gas, O.sub.2 /Cl.sub.2, is selected to be from 0.6 to 3. The gas mixture may also contain a fluorine-containing gas and helium. Preferably, the gas mixture excludes carbon-containing gases. The dry etching process allows for an increased etch rate, as well as a high etch selectivity compared to that of SiO.sub.2 gas. The trench formed in the substrate by this process can be made of a larger depth with high reproducibility and good configuration. The sidewall profile angle of the trench is maintained slightly tapered, with a sidewall profile angle of approximately 90 degrees. Also, by mixing HBr gas into the gas mixture, it is possible to better control the formation of the trench. Thus, this process makes it possible to form, in a silicon substrate, a regularly configured and very deep trench with high accuracy and high etch rate.

Dry etching process for semiconductor

A semiconductor device has an electrode interposed between an interlayer insulation film and a wire which is bonded thereto. A main component of the electrode is aluminum and the electrode contains fine-grained silicon in a concentration of 0.1 to 0.6 weight %. As a result, even if large ultrasonic power, a large load or the like is applied to the electrode when the wire is wire-bonded, damage such as the formation of a crack hardly generates at the interlayer insulation film. Therefore, the occurrence of defects due to the wire-bonding can be reduced.

Semiconductor device and method of manufacturing same

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Kariya, Japan

Yasuo Ishihara