Nippon Electric Co., Ltd.

Nec Corporation

Nippon Telegraph and Telephone Public Corporation

Toyo Ink Manufacturing Company

Yasuo Iida

Katsumi Suzuki

Kunihiko Ozaki

Katsumi Tanigaki

Nobuhiro Endo

Akihiko Kizaki

Toshiro Ono

Hiroshi Tominaga

Katumi Suzuki

Toshiki Kadota

A target object to be irradiated is transported into an irradiating chamber through a transport inlet for irradiation with an active energy beam under an inert gas atmosphere in an active energy beam irradiating section included in the irradiating chamber and, then is transported out of the irradiating chamber. When the object is subject to above steps, the gas flow resistance at the transport outlet is controlled such that the active energy beam irradiation is carried out under the condition of X/Y&gE;1, where X represents the gas amount passing through the transport inlet, and Y represents the gas amount passing through the transport outlet.

Method and apparatus for irradiating active energy ray

A mixture of an alkali soluble resin and either a quinonediazide compound or poly(2-methylpentene-1-sulfone provides a positive acting resist material, which is very high in a critical exposure dose at which the resist begins to gel by radiation-induced crosslinking. By using this resist material in direct delineation of patterns with ionizing radiation, the problem of gelling of the resist film in the areas repeatedly scanned for the detection of the alignment marks is obviated. A novolac resin comprising a t-butylphenol or phenylphenol segment is suitable as the alkali soluble resin.

Positive acting resist material comprised of novoloc resin derived from

A registration mark to be used for a micro-fine working technique such as LSI's includes a smaller protrusion pattern within a larger recess pattern formed in a surface of the semiconductor substrate. The recess and protrusion patterns are used for coarse and fine positioning, respectively. The protrusion pattern implements precise positioning because it is isolated from other regions.

Semiconductor device having a registration mark for use in an exposure

An x-ray lithography mask including a thick silicon peripheral rib with a window formed therein and a multi-layered membrane transparent to x-rays and visible light supported by the rib and covering the window. The membrane consists essentially of at least two silicon nitride layers and at least one silicon oxide layer sandwiched between the silicon nitride layers. The silicon nitride layers are preferably positioned at opposite surfaces of the multi-layered membrane.

X-ray lithography mask and method for manufacturing the same

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Tokyo, Japan

Yasuo Iida