Inter-university Research Institute Corporation

National Laboratory for High Energy Physics

High Energy Acceleration Research Organization

Yasuo Arai

Ikuo Kurachi

Miho Yamada

The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.

Radiation-damage-compensation-circuit and SOI-MOSFET

The present invention provides a voltage controlled oscillating circuit comprising a multi-staged phase inversion circuit composed of 4 or more even-number stages of phase inversion devices connected in series; and a switch circuit having a delay time characteristic similar to that of said phase inversion circuit, wherein the switch circuit satisfies oscillation conditions by converting an output phase of the even-numbered inverters connected in series into a phase that is the same as those of the outputs of odd-numbered inverters connected in series; thereby obtaining timing signals having a period equal to 1/N of the oscillation period.

Growing community of inventors

Tsukuba, Japan

Yasuo Arai