Sharp Kabushiki Kaisha Corporation

Yasunori Shimada

Hiroshi Morimoto

Tomohiko Yamamoto

Koji Taniguchi

Seiichi Mitsui

Hirohisa Tanaka

Hisakazu Nakamura

Masahito Goto

Mitsuaki Hirata

Naofumi Kimura

Takayoshi Nagayasu

Yoshitaka Hibino

Hisashi Saito

Mikio Katayama

Masaru Yoshida

Mitsuhiro Koden

Makoto Kanbe

Yoshimi Kojima

Yasuhiro Mitani

Hitoshi Ujimasa

Akihiro Hata

Kenichi Nishimura

Yutaka Nishi

Katsumara Ikubo

Hisakawa Nakamura

Katsumasa Ikubo

Toru Matano

A reflection type liquid crystal display apparatus includes: a first substrate having a plurality of reflecting electrodes; a second substrate having a light transmitting electrode; and a liquid crystal layer disposed between the first substrate and the second substrate. The first substrate includes an insulating substrate, a switching device provided on the insulating substrate for supplying a display voltage signal to the reflecting electrode, a drawing-out electrode connected to the switching device and extending under the reflecting electrode, and an insulating resin layer having a contact hole on the drawing-out electrode. The reflecting electrode is provided on the insulating resin layer, corresponding to each pixel, so as to cover the contact hole, and is electrically connected to the drawing-out electrode at the bottom of the contact hole. The drawing-out electrode has at least two different metal layers in a region larger than a bottom of the contact hole, the region including the bottom of the contact hole, and a metal layer which is an uppermost layer of the drawing-out electrode is removed at the bottom of the contact hole in the direction of a thickness either partially or until an underlying metal layer is reached.

Active matrix substrate and liquid crystal display apparatus having electrical continuity across contact holes, and method for producing the same

A reflection type liquid crystal display comprises a first substrate including a rough portion formed on a surface thereof and a reflection electrode formed on the rough portion; a second substrate including a counter electrode formed thereon; and a liquid crystal layer interposed between the first and second substrates, driven by the reflection electrode and the counter electrode to perform a display. The reflection electrode is made of aluminum or aluminum alloy, and the reflection electrode includes surface oxidation layer having at least 5 nm thickness. The first substrate includes a vertical alignment film made of insulating material formed on the surface oxidation layer of the reflection electrode.

Method for producing a reflection type liquid crystal display

The present invention provides a process for manufacturing a reflection-type liquid crystal display apparatus. The method includes the steps of: forming scanning lines, signal lines, a thin film transistor and a connector electrode on a substrate; forming a photosensitive resin film covering at least the connector electrode, and forming a reflection electrode film on the photosensitive resin film and other portions; removing a portion of the reflection electrode film located at least on the connector electrode, and patterning the reflection electrode film so that the pixel electrode resides in the display region; and removing a portion of the photosensitive resin film located on the connector electrode to reveal the connector electrode.

Process for manufacturing reflection-type liquid crystal display

Active matrix substrate and liquid crystal display apparatus having

Reflection type liquid crystal display and method of producing the same

A display apparatus having high reliability of display which can be manufactured at a low cost with high yield of production by simplified processes, of mounting drive circuits, wherein input terminals for the display signals and shorting members can be easily connected; a plurality of drive circuits which drive a display section are formed on a non-single crystal insulator substrate and mounted on a substrate via an anisotropic conductor film; and through-holes of the data lines or the scan lines and through-holes of the signal lines for the input of image signals from an external circuit are arranged parallel to the direction of arrangement of the drive circuit. This arrangement makes it possible to connect the data line and the scan line to a short ring, which is provided at an end of the substrate, without the wiring strips crossing each other.

Display apparatus with drive circuits on the substrate and with a

The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.

Metallic wiring board and a method for producing the same

A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof.

Semiconductor device and a method for producing the same

A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.

Method for producing metal wirings on an insulating substrate

Using a gate electrode formed on a semiconductor film as a mask, impurity ions are implanted into the semiconductor film. Thereafter, a photoresist film is formed on the substrate including the gate electrode. The photoresist film on the gate electrode is then exposed to light from a back side of the gate electrode. By this self-alignment method, a resist pattern narrower than the gate electrode is formed. Then, the gate electrode is narrowed through the etching thereof using the photoresist pattern as a mask, whereby an offset gate structure of a thin-film transistor is obtained.

Method of fabricating a thin-film transistor having an offset gate

A metallic wiring board includes nitrogen implanted in a surface of a substrate or a protective layer including nitrogen formed on the substrate upon which is formed a metallic film including, as a main component, one of Ta and Nb. An insulating film covering the metallic wiring is formed by anodic oxidation. The nitrogen in the substrate or the protective layer prevents Ta (or Nb) ions from entering the substrate during the anodic oxidation of the metallic wiring. As a result, insulating properties of the substrate are not degraded during the oxidation.

Metallic wiring board

A reflective substrate is provided, in which an electrode made of a material having an optical reflecting function is provided above an insulating base substrate and an upper surface of the electrode has a continuous wave shape without any flat portions. A method for manufacturing the reflective substrate includes the steps of: forming a plurality of convex portions with two or more different heights in a region where the electrode is provided; forming a polymer resin film, which has an upper surface in a continuous wave shape without any flat portions, on the substrate with the convex portions; and forming the electrode made of a material having an optical reflecting function on the polymer resin film so that the electrode has a continuous wave shape. A liquid crystal display device using the reflective substrate is provided, which includes: a reflective substrate in which an electrode made of a material having an optical reflecting function is provided on an insulating base substrate, and an upper surface of the electrode has a continuous wave shape; a second substrate provided opposing the reflective substrate; and a liquid crystal layer sealed between the reflective substrate and the second substrate.

Liquid crystal device with a reflective substrate with bumps of

The object of this invention is to enhance the display quality of reflection type liquid crystal display device having the constitutions of an organic insulating film is formed on a thin film transistor formed on a substrate, and contact holes and bumps are formed at the positions for forming reflection electrodes on the organic insulating film. The reflection electrodes are formed thereon, and drain electrodes and reflection electrodes 38 are connected through the contact holes. The effect of this invention is since the bumps are formed only in the portions of the reflection electrodes, patterning of the reflection electrodes is easy, and insulation failure between source bus wirings and reflection electrodes does not occur, and the display quality is enhanced.

Reflection type liquid crystal display device wherein the reflector has

In the liquid crystal display, a liquid crystal layer is provided between a first insulating substrate and a second insulating substrate. A plurality of first electrodes are arranged in parallel on the first insulating substrate in a first direction, and a first insulating layer is formed on the entire surface of the first insulating substrate and covers the first electrodes. A semiconductor layer is formed on the first insulating layer, and a second insulating layer is formed thereon and covers the entire surface of the first insulating substrate. This triple-layered structure constitutes a switching element array. A plurality of second electrodes are arranged in parallel on the second insulating electrode in a second direction crossing the first direction. Thus, the switching element array sandwiched between the first and second electrodes is used for driving the liquid crystal layer.

Switching element array and a liquid crystal display using the same

A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

Growing community of inventors

Nara, Japan

Yasunori Shimada