Nec Corporation

Nec Compound Semiconductor Devices, Ltd.

Yasunori Mochizuki

Masaaki Kuzuhara

Yasunobu Nashimoto

Yosuke Miyoshi

Kazunori Asano

Masashi Mizuta

Akira Usui

Masaaki Nido

A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by &isin; and t (nm), respectively, the following condition is satisfied 5&lE;&isin;<8, and 100<t<350.

Field effect transistor

A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.

Fet having non-overlapping field control electrode between gate and drain

Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.

Method for growing p-type gallium nitride based compound semiconductors

Growing community of inventors

Tokyo, Japan

Yasunori Mochizuki