Kwansei Gakuin Educational Foundation

Toyota Tsusho Corporation

Toyo Tanso Co., Ltd.

Yasunori Kutsuma

Tadaaki Kaneko

Koji Ashida

Ryo Hashimoto

Satoru Nogami

Satoshi Torimi

Norihito Yabuki

Masato Shinohara

Youji Teramoto

Daichi Dojima

A manufacturing device of SiC semiconductor substrates includes a SiC container () in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace () capable of heating the SiC container in Si atmosphere. The device can further be configured such that the SiC container is housed in Si atmosphere and an underlying substrate () is housed in the SiC container, and the high-temperature vacuum furnace is capable of heating with a temperature gradient.

Manufacturing device for SiC semiconductor substrate

Disclosed is a method for using a SiC container () in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.

Method of using sic container

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrate

In a state in which a SiC container () of a material including polycrystalline SiC is housed in a TaC container () of a material including TaC and in which an underlying substrate () is housed in the SiC container (), the TaC container () is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container () is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container () are bonded to Si atoms in an atmosphere so that an epitaxial layer () of single crystalline 3C-SiC thereby grows on the underlying substrate ().

Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer

Provided is a surface treatment method for a SiC substrate (), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate () is etched by heating the SiC substrate () under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (), so that a surface pattern of the SiC substrate () after etching treatment is controlled.

Surface treatment method for SiC substrate

In a first step, protrusions () are formed on a surface of an SiC substrate (), and the SiC substrate () is etched. In a second step, the protrusions () of the SiC substrate () are epitaxially grown through MSE process, and an epitaxial layer () containing threading screw dislocation, which has been largely grown in the vertical (c-axis) direction as a result of MSE process, is at least partially removed. In a third step, MSE process is performed again on the SiC substrate () after the second step, to cause epitaxial layers () containing no threading screw dislocation to be grown in the horizontal (a-axis) direction to be connected at the molecular level, so that one monocrystalline 4H&#x2014;SiC semiconductor wafer () having a large area is generated throughout an Si-face or a C-face of the SiC substrate ().

Method for manufacturing semiconductor wafer

Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

Growing community of inventors

Sanda, Japan

Yasunori Kutsuma