Tokyo Electron Limited

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Yasunori Kumagai

Shigekazu Komatsu

Kippei Sugita

Katsuhito Hirose

Ryohei Matsui

Dai Shinozaki

Takashi Kameoka

Koichi Miyashita

Satoshi Gomi

Mitsuya Inoue

Tomoko Yanagita

Katsuaki Sakamoto

Hiroshi Hirose

Takashi Yoshiyama

Ka Toh

A processing apparatus for processing a substrate includes: a plurality of end devices; a low-level controller configured to control specific end devices among the plurality of end devices; and a module controller configured to execute a recipe for processing the substrate, to specify control steps satisfying a specific condition among a plurality of control steps of the recipe, and to transmit the specified control steps to the low-level controller, wherein the low-level controller controls the specific end devices based on the control steps received from the module controller.

Processing apparatus and processing method

Disclosed is a film formation method, including vaporizing a plurality of raw material monomers in respective corresponding vaporizers, supplying the plurality of raw material monomers into a film formation apparatus, causing vapor deposition polymerization of the plurality of raw material monomers in the film formation apparatus to form an organic film on a substrate, and removing an impurity contained in at least one raw material monomer among the plurality of raw material monomers before the vapor deposition polymerization.

Film formation method and film formation apparatus

A film forming apparatus for forming a polyimide film on a substrate installed within a film forming container. The apparatus includes: a first vaporizer configured to vaporize a first raw material in a solid state, and supply the vaporized first raw material gas to the substrate; a second vaporizer configured to vaporize a second raw material in a liquid state, and supply the vaporized second raw material gas to the substrate; a first pressure measurement unit configured to measure the internal pressure of the first vaporizer; a second pressure measurement unit configured to measure the internal pressure of the second vaporizer; and a controller configured to calculate a supply amount of the first and second raw material gases by the first and second pressure measurement units, respectively, and control the first and second vaporizers to supply the first and second raw material gases in a uniform amount.

Film forming apparatus

A holding member for use in a test includes a base made of silicon or glass and chips in which devices are formed is mountable thereon. Positioning members made of resist sheets are formed on the top surface of the base. A resist film is formed on the bottom surface of the base, and suction grooves (intersection portions, connection portions) and support members are formed in the resist film. Suction holes are formed in regions of the top surface of the base where the chips are mounted, wherein the suction holes are formed through the base and communicate with the suction groove.

Holding member for use in test and method for manufacturing same

A circuit for protecting a DUT is disposed in parallel with a DUT which is supplied with current via wirings and switchable between conducting and non-conducting state. The circuit is switchable between conducting and non-conducing state and switched from non-conducting state to conducting state as the DUT is switched from conducting state to non-conducting state.

Circuit for protecting DUT, method for protecting DUT, testing apparatus and testing method

An inspection apparatus includes a fritting circuit applying a voltage between a probe pair composed of probes in pairs in contact with a substrate to cause a fritting phenomenon to establish electrical conduction between the probes and the substrate; and a switching circuit electrically connecting the probe pair and the flitting circuit and capable of freely switching between polarities of a voltage applied between the probe pair. Voltage is applied twice between the probe pair in contact with the substrate to thereby perform fritting twice. In the two times of fritting, the polarities of the voltage applied between the probe pair are changed.

Growing community of inventors

Nirasaki, Japan

Yasunori Kumagai