Kyocera Corporation

Yasunori Kawanabe

Yoshihiro Okawa

Kazuhiro Kuchimachi

Saburo Nagano

Yuusaku Ishimine

Takeshi Muneishi

Hironori Inoue

Kenji Kitazawa

Hiroshi Aida

Koichi Nagasaki

Shinya Terao

Akihiro Kukita

Yoshihiro Komatsu

A heater includes a base, a resistive heating body, and a terminal portion. The base is formed of ceramic and has a plate shape. The resistive heating body is located in the base. The terminal portion is electrically connected to the resistive heating body. The base includes a protruding portion surrounding the terminal portion, on a lower surface side. The protruding portion is formed of a ceramic member, and the terminal portion passes through a through hole formed in the ceramic member. The ceramic member is bonded to at least one of the lower surface of the base or the terminal portion.

Ceramic structure and wafer system

A base structure includes a base, a first conductor layer, and a via conductor. The base has a first surface. The first conductor layer is positioned along the first surface in the base. The via conductor includes a first part and a second part in a section that includes the via conductor and that extends in a first direction perpendicular to the first surface. The length of the first part in the first direction is larger than the thickness of the first conductor layer. The length of the second part in the first direction is larger than the thickness of the first conductor layer. The second part is continuous with the first part, and at least a portion of the outer edge of the second part is displaced from the outer edge of the first part when viewed in the first direction.

Base structure and wafer placing device

A structural body (A toE) according to the present disclosure includes a base (D,E), a first electrode layer (), a second electrode layer (), a first via conductor (), a second via conductor (), and a connection conductor (). The base (D,E) is composed of a ceramic. The first electrode layer () and the second electrode layer () are located inside the base (D,E). The first via conductor () and the second via conductor () are located inside the base (D,E) and connect the first electrode layer () and the second electrode layer (). The connection conductor is located inside the base (D,E), and connects the first via conductor and the second via conductor.

Structural body and heating apparatus

A heater includes a base body, resistance heating element, and terminal part. The base body comprises ceramic, is plate shaped, and includes a hole on its lower surface. The resistance heating element is inside the base body. The terminal part is electrically connected to an internal conductor, is at least partially located inside the base body, and is exposed from a lower surface of the base body to an exterior of the base body. The terminal part includes a connection conductor that is inserted in the hole and connected to the internal conductor. A lower surface of the connection conductor is located on a side closer to the upper surface of the base body. The hole includes a reduced-diameter portion which has a diameter smaller than a diameter of the connection conductor between the lower surface of the connection conductor and the lower surface of the base body.

A heater includes a base body and a resistance heating element. The base body is configured by an insulating material and includes a top surface on which a wafer is placed. The resistance heating element extends in the base body along the top surface. A top surface of the resistance heating element and the base body are in contact with each other. A vacuum or gas-filled gap is interposed between a side surface of the resistance heating element and the base body.

Heater and method of production of same

An electrostatic chuck includes an insulating base body including a predetermined surface, and an electrode inside the base body, which is layer shaped along the predetermined surface. An upper surface of the electrode facing a side where the predetermined surface is located and the base body are in contact. A gap which is rendered a vacuum or filled with a gas is interposed between a side surface of the electrode and the base body.

Electrostatic chuck and method for manufacturing same

A board-like structure includes a base body, an internal conductor, and a terminal member. The base body is an insulating member including an upper surface and a lower surface on an opposite side to the upper surface. The internal conductor runs along the upper surface and the lower surface inside the base body. The terminal member is at least partially located inside the base body, is exposed to an external portion of the base body at the lower surface, and is electrically connected to the internal conductor. The terminal member includes an insulating terminal base part and a conductor layer on a surfaces of the terminal base part.

Board-like structure and heater system

A heater includes a plate-shaped part, one or more resistance heating element, a columnar part, and a plurality of relay conductors. The plate-shaped part has an insulation property and includes an upper surface on which a wafer is to be superimposed and a lower surface on an opposite side to the upper surface. The one or more resistance heating element is buried in the plate-shaped part. The columnar part has an insulation property and projects downward from the lower surface of the plate-shaped part. The plurality of relay conductors respectively include extension portions vertically extending inside the columnar part and are electrically connected to the one or more resistance heating elements.

Wafer-use member, wafer-use system, and method for manufacturing wafer-use member

A wafer holding member comprises a ceramic base body and a heating resistor, an electrostatic adhesion electrode or a plasma generation electrode embedded in the base body. The wafer holding member exhibits reduced thermal expansion and greater corrosion resistance against halogenic gases. The heating resistor is made of a mixture containing 90 to 99 wt % of at least one of W, Mo, WC, TiC and TiN (the first component), and 1 to 10 wt % of AlN (the second component), the electrostatic adhesion electrode is made of a mixture containing 50 to 99 wt % of said first component, and 1 to 50 wt % of said second component, and the plasma generation electrode is made of a mixture containing 80 to 99 wt % of said first component, and 1 to 20 wt % of said second component. When heating resistors are used, the ceramic base body can include a plurality of heating resistors embedded in the base body and energized successively, with the ratio of the resistance value of the heating resistor numbered m to the resistance value of the heating resistor numbered m-1 is in a range of 1.5 to 4. The ceramic holding member can comprise a corrosion-resistant member made of an aluminum nitride based sintered body and more particularly, at least the mounting surface that holds the wafer is made of 99 wt % or more AlN and 1500 ppm or less of silicon.

Wafer holding member

A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, an outer circumference and penetration holes. Each of the penetration holes opens in the flat surface, and has an inner wall. An aluminum nitride film covers the flat surface, the outer circumference, and the inner wall of each of the penetration holes.

Wafer support member

Disclosure relates to the method for improving the heat absorption characteristic of a wafer holding member made of aluminum nitride during indirect heating and the method for preventing electrostatic adhesion. To establish the former method, the wafer holding member comprises an aluminum nitride based sintered body containing Er.sub.2 O.sub.3 as a sintering aid and silicon in the range of more than 200 ppm to 500 ppm or less and having a thermal conductivity of 150 W/m.k or more, and further comprises a holding base body made of an aluminum nitride based sintered body.

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Kokubu, Japan

Yasunori Kawanabe