Sanyo Electric Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Agency of Industrial Science and Technology

Yasunori Inoue

Ryosuke Usui

Hideki Mizuhara

Yasuo Miyake

Masashi Murakami

Kazuko Nishimura

Manabu Nakata

Shinichi Tanimoto

Yoshio Okayama

Tokuhiko Tamaki

Yoshiaki Satou

Shinichi Machida

Masumi Izuchi

Yoshikazu Ibara

Kiyoshi Shibata

Hiroyuki Watanabe

Kiyoshi Yoneda

Yusuke Igarashi

Takeshi Nakamura

Yasuhiro Kohara

Masayuki Nagamatsu

Katsuya Nozawa

Tetsuya Yamamoto

Mayumi Nakasato

Naoteru Matsubara

Yasuyuki Yanase

Masaya Hirade

Atsuhiro Nishida

Atsushi Sakai

Masurao Yoshii

Ryosuke Usul

Kazutoshi Tsujimura

Yasuhiko Yamashita

Yoshihiro Sato

Sanshiro Shishido

Takayoshi Yamada

Tetsuro Sawai

Hidenari Kanehara

Takenori Goto

Kazushi Mori

Toshikazu Imaoka

Yoshikazu Yamaoka

Kazuhiro Sasada

Atsushi Saita

Kazunobu Mameno

Nobuhisa Takakusaki

Isao Ogura

Hidetaka Nishimura

Makoto Akizuki

Katsumi Ito

Hiroshi Hanafusa

Katsunori Kobayashi

Keita Kawahara

Yuuki Ota

An imaging device including a photoelectric convertor that includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which a rate of change of the photoelectric conversion efficiency of the photoelectric convertor with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a first voltage is applied to the first electrode or the second electrode so that a bias voltage between the first electrode and the second electrode exists in the first voltage range.

Imaging device and camera system including photoelectric conversion layer between two electrodes, and driving method of imaging device

A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

Imaging device and camera system, and driving method of imaging device

An imaging device including a pixel that includes: a photoelectric converter that converts light into a charge; a charge accumulation region to which the charge is input; and an amplifier transistor that includes a gate electrically connected to the charge accumulation region. The amplifier transistor being configured to output a signal that corresponds to a potential of the charge accumulation region. The imaging device further including a detection circuit that is configured to detect a level of the signal from the amplifier transistor, wherein a sensitivity of the pixel is caused to be increased, in a case where the level detected by the detection circuit is greater than a first threshold value.

An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Imaging device that generates multiple-exposure image data

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Imaging device including at least one unit pixel cell and voltage application circuit

An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

Imaging device

An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.

An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.

Imaging device including first and second imaging cells and camera system

An imaging device includes a pixel including a photoelectric converter, where the pixel captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A sensitivity of the photoelectric converter in the first exposure period is different from a sensitivity of the photoelectric converter in the second exposure period, and the imaging device generates multiple-exposure image data including at least the first data and the second data.

An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode: an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

Growing community of inventors

Ogaki, Japan

Yasunori Inoue