Socionext Inc.

Fujitsu Semiconductor Limited

Yasunori Fujimoto

Takumi Ihara

Seiji Ueno

Joji Fujimori

Nobutaka Shimizu

Takeshi Imamura

A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

Semiconductor device having multiple bonded heat sinks

A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.

Manufacturing method of semiconductor device

Method for manufacturing a semiconductor device having multiple heat sinks

Semiconductor device and manufacturing method of semiconductor device

Growing community of inventors

Yokohama, Japan

Yasunori Fujimoto