Nissin Electric Co., Ltd.

Nissin Ion Equipment Co., Ltd.

Emd Corporation

Yasunori Ando

Kiyoshi Ogata

Eiji Kamijo

Dongwei Li

Daisuke Matsuo

Yasuo Suzuki

Masatoshi Onoda

Shigeaki Kishida

Shuichi Maeno

Yasuhiro Matsuda

Yoshitaka Setoguchi

Noriaki Matsumura

Masanori Watanabe

Hilton Frank Glavish

Takahiro Nakahigashi

Akinori Ebe

Eiji Takahashi

Masao Naito

Yutaka Inouchi

Yoshio Matsubara

Hiroshi Inami

Koichi Orihira

Masashi Konishi

Kiyoshi Kubota

Takanori Tsunoda

Masayuki Tsuji

Syojiro Dohi

Syuichi Maeno

Toshihiko Sakai

Daisuke Azuma

Masaki Fujiwara

Seiji Nakata

The present invention realizes a plasma treatment device with which a film deposition rate and film thickness of a film formed on a substrate can be made uniform. A plasma treatment device includes: a plurality of antennas for plasma generation arranged in a vacuum chamber; and a plurality of groups of multiple gas injection ports arranged in the vicinity of lines that are substantially perpendicular to longitudinal directions of the plurality of antennas and extend in a direction in which the plurality of antennas are arranged with respect to each other. The plasma treatment device further includes a gas flow-rate control unit for controlling flow rates of gas injected from each of the groups of the multiple gas injection ports.

Plasma treatment device

According to the present invention, provided is an antenna mechanismthat adjusts the impedance of an antenna body through which a high-frequency current flows to generate plasma by means of a simple configuration, and generates plasma P, and comprises: the antenna bodythrough which high-frequency current flows; and one or a plurality of adjustment circuitsprovided adjacent to the antenna body. The adjustment circuithas a metal conductorforming a closed circuit and a capacitorforming the closed circuit.

Antenna mechanism and plasma processing device

A capacitive element using a liquid as a dielectric, whereby the capacitance is prevented from changing. The capacitive element is equipped with: a storage container that has an inlet port for introducing a liquid serving as a dielectric, has an outlet port for discharging the liquid, and is filled with the liquid; and at least one pair of electrodes that are provided in the storage container and face each other, wherein an opening section for exhausting air bubbles in the storage container is formed in an upper wall of the storage container.

Capacitive element and plasma processing device

Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of &#x2212;1 kV or higher.

Method for producing thin film transistor

The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

Sputtering apparatus

An antenna conductor is cooled to stably generate plasma, and unexpected fluctuation in the electrostatic capacity of a variable capacitor connected to the antenna conductor is suppressed while cooling the variable capacitor. A plasma processing device which generates plasma in a vacuum container and processes a substrate by using the plasma is provided. The plasma processing device includes: an antenna conductor through which a high-frequency current is caused to flow to generate plasma, and a variable capacitor which is electrically connected to the antenna conductor. The antenna conductor has a flow path in which a cooling liquid flows. A dielectric of the variable capacitor is constituted of the cooling liquid flowing through the antenna conductor.

Plasma processing device

The impedance of an antenna is reduced and gaps generated between electrodes constituting a capacitance element and a dielectric body are eliminated. An antenna () for generating inductively coupled plasma P includes at least two conductor elements (), an insulation element () that is arranged between the mutually adjacent conductor elements () and insulates the conductor elements (), and a capacitance element () that is connected electrically to and in series with the mutually adjacent conductor elements (). The capacitance element () is configured from a first electrode (A) electrically connected to one of the mutually adjacent conductor elements (), a second electrode (B) electrically connected to the other of the mutually adjacent conductor elements (), and a liquid dielectric body filling the space between the first electrode (A) and the second electrode (B).

Antenna for generating plasma, and plasma treatment device and antenna structure provided with antenna for generating plasma

Provided are an antenna, which is disposed in a vacuum chamber for generating an inductively coupled plasma, and a plasma processing device. The antenna and the plasma processing device suppress increase of the impedance even if the antenna is lengthened. An antennais disposed in a vacuum chamberfor generating an inductively coupled plasmain the vacuum chamberby applying a high frequency current. The antennaincludes an insulating pipeand a hollow antenna bodywhich is disposed in the insulating pipeand in which cooling water flows. The antenna bodyhas a structure that a plurality of metal pipesare connected in series with a hollow insulatorinterposed between the adjacent metal pipes, and each connecting portion has a sealing function with respect to vacuum and the cooling water.

Antenna for plasma generation and plasma processing device having the same

Provided is a pipe holding connection structure configured so that the width of the entire structure is reduced and so that the number of parts and the number of assembly work processes are reduced. This pipe holding connection structure is provided with: a housing affixed so as to air-tightly close the opening of a vacuum container; a first pipe having a portion near an end portion thereof extending through both the opening and the housing; and a second pipe having a female thread part engaging with a male thread part located at the end portion. The pipe has a locking part. Fluid is caused to flow through both the pipes. Pieces of packing are provided between the pipe and the housing and between the pipe and an end portion of the pipe, respectively. This pipe holding connection structure can be used for a high-frequency antenna device.

Pipe holding connection structure and high frequency antenna device including the same

A method for fabricating a thin-film transistor is described. A structure is provided, including a substrate transmitting an excimer laser light, a diffusion prevention film on the substrate, a gate electrode and a gate insulating film on the diffusion prevention film, and an oxide semiconductor layer on the gate insulating film. The structure is irradiated with an excimer laser light from the side of the substrate, so that two outer regions of the oxide semiconductor layer beside the region corresponding to the gate electrode are irradiated by the excimer laser light, with the gate electrode as a mask, to be reduced in resistance and thereby one of the two outer regions forms a source region and the other one forms a drain region. The diffusion prevention film includes a SiN:F film containing fluorine in a SiN film.

Method for fabricating thin-film transistor

An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (O), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.

Silicon oxynitride film and method for forming same, and semiconductor device

A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductoris provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.

Plasma generation device and plasma processing device

The plasma processing including an antenna which is substantially straight in a plan view of the antenna is provided. The antenna includes two rectangular conductor plates disposed on a same plane along a surface of a substrate in a manner that the two rectangular conductor plates are parallel to each other with an interval therebetween. An end of a side in a longitudinal direction of each of the two rectangular conductor plates is connected through a conductor so as to form a go-and-return conductor, wherein the high frequency current flows in the two rectangular conductor plates in opposite directions. Notches are formed at the sides of the two rectangular conductor plates adjacent to the interval and the notches facing each other define an opening. The notches form the openings. The openings are separately arranged in the longitudinal direction of the antenna.

Plasma processing apparatus

An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.

When an ion beamis to be extracted from an ion sourceby using a gas containing boron trifluoride as an ion source gasfor supplying the gas into a plasma chamberfor the ion source, a bias voltage Vof a plasma electrodewith respect to the plasma chamberfor the ion sourceis set to be positive by a bias circuit

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Kyoto, Japan

Yasunori Ando