Hitachi, Ltd.

Renesas Technology Corp.

Yasunobu Yanagisawa

Yusuke Nonaka

Toshiro Takahashi

Kazuhisa Suzuki

A capacitive element Chaving a small leakage current is formed by utilizing a gate oxide filmB thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element Chas a gate electrodeE. A part of the gate electrodeE is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power supply voltage.

Semiconductor integrated circuit device and method of manufacturing the same

A capacitive element C having a small leakage current is formed by utilizing a gate oxide film B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C has a gate electrode E. A part of the gate electrode E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power supply voltage.

A capacitive element C having a small leakage current is formed by utilizing a gate oxide film B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C has a gate electrode E. A part of the gate electrode E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.

A capacitive element C having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C has a gate electrode E. A part of the gate electrode E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.

Semiconductor integrated circuit device

A capacitive element C having a small leakage current is formed by utilizing a gate oxide film B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C has a gate electrode E. A part of the gate electrode E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the may reliably operate even at a low power-supply voltage.

Growing community of inventors

Odawara, Japan

Yasunobu Yanagisawa