Fujitsu Semiconductor Limited

United Semiconductor Japan Co., Ltd.

Suvolta, Inc.

Yasunobu Torii

Taiji Ema

Kazushi Fujita

Mitsuaki Hori

Pushkar Ranade

Lance A Scudder

Teymur Bakhishev

Dalong Zhao

Junji Oh

Urupattur C Sridharan

Toshifumi Mori

A probe position monitoring structure includes a first common line, a second common line, a contact portion configured, and a reference zigzag structure. The contact portion includes a first zigzag structure, a second zigzag structure, a third zigzag structure, and a fourth zigzag structure. A first end of the first zigzag structure, a first end of the fourth zigzag structure, and a first end of the reference zigzag structure are directly connected with the first common line. A first end of the second zigzag structure, a first end of the third zigzag structure, and a second end of the reference zigzag structure are directly connected with the second common line. The reference zigzag structure is disposed between the first zigzag structure and the second zigzag structure. A line width of the reference zigzag structure is equal to a line width of the first zigzag structure.

Probe position monitoring structure and method of monitoring position of probe

A probe position monitoring structure includes a first common line and a contact portion configured for being directly contacted with a probe. The contact portion includes a first zigzag structure, and a first end of the first zigzag structure is directly connected with the first common line. A method of monitoring a position of a probe includes the following steps. The probe position monitoring structure is provided. The first zigzag structure is directly contacted with a first probe. A resistance measurement is performed to measure a resistance of a portion of the first zigzag structure located between the first probe and the first end for monitoring a position of the first probe.

A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.

Semiconductor device and manufacturing method of semiconductor device

There are included: forming element isolation regions in a semiconductor substrate; introducing a first impurity of a first conductivity type, to thereby form a first well and a second well of the first conductivity type; introducing a second impurity of a second conductivity type, to thereby form a third well of the second conductivity type and introducing the second impurity into a region between the first well and the second well, to thereby form a separation well of the second conductivity type; and further introducing a third impurity of the second conductivity type into the region between the first well and the second well.

Semiconductor device having multiple wells for low- and high-voltage CMOS transistors

A method for designing a semiconductor device includes arranging at least a pattern of a first active region in which a first transistor is formed and a pattern of a second active region in which a second transistor is formed; arranging at least a pattern of a gate wire which intersects the first active region and the second active region; extracting at least a first region in which the first active region and the gate wire are overlapped with each other; arranging at least one pattern of a compressive stress film on a region including the first active region; and obtaining by a computer a layout pattern of the semiconductor device, when the at least one pattern of the compressive stress film is arranged, end portions of the at least one pattern thereof are positioned based on positions of end portions of the first region.

Method for designing a semiconductor device including stress films

Silicon loss prevention in a substrate during transistor device element manufacture is achieved by limiting a number of photoresist mask and chemical oxide layer stripping opportunities during the fabrication process. This can be achieved through the use of a protective layer that remains on the substrate during formation and stripping of photoresist masks used in identifying the implant areas into the substrate. In addition, undesirable reworking steps due to photoresist mask misalignment are eliminated or otherwise have no effect on consuming silicon from the substrate during fabrication of device elements. In this manner, device elements with the same operating characteristics and performance can be consistently made from lot to lot.

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Kuwana, Japan

Yasunobu Torii