Furukawa Co., Ltd.

Yasunobu Sumida

Yasuharu Fujiyama

Yujiro Ishihara

Hiroki Goto

Takuya Nakagawa

A method for manufacturing a group III nitride semiconductor substrate includes a sapphire substrate preparation step Sfor preparing a sapphire substrate having, as a main surface, a {10-10} plane or a plane obtained by inclining the {10-10} plane at a predetermined angle in a predetermined direction; a heat treatment step Sfor performing a heat treatment over the sapphire substrate while performing a nitriding treatment or without performing the nitriding treatment; a buffer layer forming step Sfor forming a buffer layer over the main surface of the sapphire substrate after the heat treatment; and a growth step Sfor forming a group III nitride semiconductor layer, in which a growth surface has a predetermined plane orientation, over the buffer layer, in which at least one of a plane orientation of the main surface of the sapphire substrate, presence or absence of the nitriding treatment during the heat treatment, and a growth temperature in the buffer layer forming step is adjusted such that the growth surface of the group III nitride semiconductor layer has the predetermined plane orientation.

Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate

A method for manufacturing a group III nitride semiconductor substrate includes a preparation step Sfor preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a &#x3c;0002&#x3e; direction of the sapphire substrate and a &#x3c;10-10&#x3e; direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step Sfor epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.

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Tokyo, Japan

Yasunobu Sumida