Nissan Chemical Industries Limited

Nissan Chemical Corporation

Nagoya University

Yasunobu Someya

Rikimaru Sakamoto

Keisuke Hashimoto

Takafumi Endo

Tetsuya Shinjo

Ryo Karasawa

Hiroyuki Wakayama

Ryuta Mizuochi

Takahiro Kishioka

Hirokazu Nishimaki

Tokio Nishita

Masakazu Kato

Hiroaki Okuyama

Masaru Hori

Makoto Sekine

Satoshi Takeda

Yuki Usui

Masami Kozawa

Yuichi Goto

Satoshi Kamibayashi

Shinsuke Tadokoro

Shou Shimizu

A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

Resist underlayer film forming composition having a disulfide structure

Provided are: a composition for forming a coating film, the composition comprising (a) a polymer containing a structural unit represented by formula (1a) or (1b), and (b) a solvent including 51-99 mass % of water and 1-49 mass % of at least one organic solvent selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, methyl 2-hydroxyisobutyrate, ethyl 3-ethoxypropionate, and ethyl lactate; and a method for manufacturing a semiconductor device using the same.

Composition for forming coating film and method for manufacturing semiconductor device

A composition for forming a resist underlayer film enables the formation of a desired resist pattern; and a method for forming a resist pattern using this resist underlayer film forming composition. A resist underlayer film forming composition contains an organic solvent and a polymer that has a structure represented by formula (1) or (2) at an end of the polymer chain. (In formula (1) and formula (2), X represents a divalent organic group; A represents an aryl group having 6-40 carbon atoms; R1 represents a halogen atom, an alkyl group having 1-40 carbon atoms or an alkoxy group having 1-40 carbon atoms; each of R2 and R3 independently represents a hydrogen atom, an optionally substituted alkyl group having 1-10 carbon atoms, an aryl group having 6-40 carbon atoms or a halogen atom; each of n1 and n3 independently represents an integer of 1-12; and n2 represents an integer of 0-11.)

Resist underlayer film-forming composition and method for forming resist pattern using the same

A self-assembled film forming composition for forming a phase-separated structure of a block copolymer layer on a substrate, containing a block copolymer and a solvent, and is configured such that: the block copolymer is obtained by bonding a silicon-free polymer to a silicon-containing polymer that contains, as a constituent unit, styrene that is substituted by a silicon-containing group; the silicon-free polymer contains a structure derived from formula [1-1] or formula [1-2]; and the silicon-containing group contains one silicon atom. [In formula [1-1] or formula [1-2], each of Rand Rindependently represents a hydrogen atom, a halogen atom or an alkyl group having 1-10 carbon atoms; and each of R-Rindependently represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having 1-10 carbon atoms, an alkoxy group having 1-10 carbon atoms, a cyano group, an amino group, an amide group or a carbonyl group.]

Composition for forming block copolymer layer for formation of microphase-separated pattern

A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Protective film forming composition having a diol structure

A composition for forming an underlayer film necessary for facilitating alignment of self-assembled film into desired vertical pattern. Composition for forming an underlayer film of self-assembled film including a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound in main chain. The polymer is a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound with aromatic ring structure of aromatic ring-containing compound or polymer chain derived from vinyl group of vinyl group-containing compound in main chain. The polymer has unit structure of Formula (1):X&#x2014;Y&#x2003;&#x2003;Formula (1)wherein X is single bond, divalent group having vinyl structure as polymer chain, or divalent group having aromatic ring-containing structure as polymer chain, and Y is divalent group having aliphatic polycyclic structure as polymer chain. The aliphatic polycyclic compound is bi- to hexa-cyclic diene compound. The aliphatic polycyclic compound is dicyclopentadiene or norbornadiene.

Composition for forming underlayer film of self-assembled film including aliphatic polycyclic structure

There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted Carylene group derived from polyhydroxy aromatic compound; B is Carylene group or Cheterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; Xis H, NH, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, Calkyl group or Caryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or Cheterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form Cring together with carbon atom to which they are bonded. 

Resist underlayer film-forming composition comprising carbonyl-containing polyhydroxy aromatic ring novolac resin

A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Protective film forming composition having an acetal structure

An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).

Underlayer film-forming composition for use in forming a microphase-separated pattern

A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300&#xb0; C.-700&#xb0; C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300&#xb0; C. or higher and 700&#xb0; C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2):O&#x2014;Ar&#x2003;&#x2003;Formula (2)a polymer containing a structural unit of the following Formula (3):O&#x2014;Ar&#x2014;O&#x2014;Ar-T-Ar&#x2003;&#x2003;Formula (3)a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

Method for manufacturing semiconductor substrate having group-III nitride compound layer

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film. 

Resist underlayer film-forming composition for lithography containing polymer having blocked isocyanate structure

A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160&#xb0; C. or lower; and a high boiling point solvent (B) having a boiling point of 170&#xb0; C. or higher.

Self-organized film-forming composition for use in forming a micro-phase-separated pattern

An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.

Upper-layer film forming composition and method for producing a phase-separated pattern

A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.

Method for roughening surface using wet treatment

An underlayer film-forming composition for a self-assembled film having a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.

Growing community of inventors

Toyama, Japan

Yasunobu Someya