Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Yasunobu Saito

Akira Yoshioka

Wataru Saito

Hidetoshi Fujimoto

Tetsuya Ohno

Toshiyuki Naka

Takao Noda

Tomohiro Nitta

Yorito Kakiuchi

Toru Sugiyama

Naoko Yanase

Takeshi Uchihara

Tasuku Ono

Takaaki Yasumoto

Shingo Masuko

Kunio Tsuda

Kazuhide Abe

Tatsuya Nishiwaki

Atsuko Iida

Masatoshi Arai

Kohei Oasa

Takuo Kikuchi

Takako Motai

Miki Yumoto

Masaru Furukawa

Tatsuya Shiraishi

Kazuo Saki

Yukako Murakami

Junji Kataoka

Yasunari Yagi

According to one embodiment, a semiconductor device comprises a first nitride semiconductor layer on a substrate and a second nitride semiconductor layer on the first nitride semiconductor layer. The second nitride semiconductor layer has a larger bandgap than the first nitride semiconductor layer. Source and drain electrodes are on the second nitride semiconductor layer. A gate electrode is between the source electrode and the drain electrode. A third nitride semiconductor layer of p-type conductivity is on the second nitride semiconductor layer between the drain electrode and the gate electrode and spaced from the drain electrode.

Semiconductor device

A semiconductor device includes: a first nitride semiconductor layer, a second nitride semiconductor layer that is provided on the first nitride semiconductor layer and has a band gap larger than a band gap of the first nitride semiconductor layer, a gate electrode that is provided on the first nitride semiconductor layer, a first electrode that is electrically connected to the first nitride semiconductor layer, a second electrode disposed such that the gate electrode is positioned between the first electrode and the second electrode, and electrically connected to the first nitride semiconductor layer, and a first insulation layer that is provided between the gate electrode and the second electrode, disposed such that the second nitride semiconductor layer is positioned between the first nitride semiconductor layer and the first insulation layer, and including silicon oxide having an oxygen-to-silicon atomic ratio (O/Si) of 1.50 or more and 1.85 or less.

A semiconductor device includes a first nitride semiconductor layer having a first region, a second nitride semiconductor layer that is on the first nitride semiconductor layer and contains carbon and silicon, a third nitride semiconductor layer that is on the second nitride semiconductor layer and has a second region, a fourth nitride semiconductor layer on the third nitride semiconductor layer, the fourth nitride semiconductor layer having a band gap that is wider than a band gap of the third nitride semiconductor layer, a source electrode that is on the fourth nitride semiconductor layer and is electrically connected to the first region, a drain electrode that is on the fourth nitride semiconductor layer and is electrically connected to the second region, and a gate electrode that is on the fourth nitride semiconductor layer and is between the source electrode and the drain electrode.

A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer.

Semiconductor device and method of manufacturing the same

According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

Nitride semiconductor device and method for manufacturing same

A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.

A semiconductor device of this embodiment includes: a first semiconductor layer including AlGaN; a second semiconductor layer provided above the first semiconductor layer, and including undoped or n-type AlGaN; a first and second electrodes provided above the second semiconductor layer; a third semiconductor layer provided above the second semiconductor layer between the first electrode and the second electrode, is at a distance from each of the first and second electrodes, and including p-type AlGaN; a control electrode provided above the third semiconductor layer; a fourth semiconductor layer provided above the third semiconductor layer between the first electrode and the control electrode, is at a distance from the control electrode, and including n-type AlGaN; and a fifth semiconductor layer provided above a portion of the third semiconductor layer between the control electrode and the second electrode, is at a distance from the control electrode, and including n-type AlGaN.

GaN based semiconductor device and method of manufacturing the same

According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode.

A nitride semiconductor device includes a substrate, a first InGaAlN layer, a second InGaAlN layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second InGaAlN layer is provided on a surface of the first InGaAlN layer. The second InGaAlN layer has a wider band gap than the first InGaAlN layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second InGaAlN layer. The Schottky electrode is provided on the second InGaAlN layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second InGaAlN layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

Nitride semiconductor device

In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.

HEMT semiconductor device

According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes AlGaN (0&#x2266;X&#x2266;1). The second semiconductor region is provided on a side opposite to the substrate of the first semiconductor region and includes AlGaN (0&#x2266;Y&#x2266;1, X&#x2266;Y). The first electrode is provided on a side opposite to the first semiconductor region of the second semiconductor region and ohmically connects to the second semiconductor region. The conducting section electrically connects between the first electrode and the conductive region.

A semiconductor device includes: a first semiconductor layer made of an AlGaN (0&#x2266;x&#x3c;1); a second semiconductor layer provided on the first semiconductor layer and made of an undoped or first conductivity type AlGaN (0&#x3c;y&#x2266;1, x&#x3c;y); an anode electrode and a cathode electrode which are connected to the second semiconductor layer; and a third semiconductor layer of second conductivity type provided between the anode electrode and the cathode electrode when viewed from a direction perpendicular to an upper surface of the second semiconductor layer. The third semiconductor layer is depleted when a predetermined magnitude or more of voltage is applied between the anode electrode and the cathode electrode.

According to one embodiment a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

According to one embodiment, a semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, an insulating film, an ohmic electrode, and a Schottky electrode. A surface region of the third nitride semiconductor layer between the ohmic electrode and the Schottky electrode contains an element heterogeneous with the constituent element of the third nitride semiconductor layer at a higher concentration than a region of the third nitride semiconductor layer of the second nitride semiconductor layer side.

Growing community of inventors

Tokyo, Japan

Yasunobu Saito