Tdk Corporation

Tdk Electronics Company, Limited

Tdk Kabushiki Kaisha

Snaptrack Incorporated

Yasunobu Oikawa

Yoshihiko Yano

Kenji Horino

Hitoshi Saita

Tatsuo Namikawa

Shinobu Fujiwara

Shinichiro Kakei

Masahiro Nakano

Katsuo Sato

Katsuhiko Gunji

Kiyoshi Furukawa

Masahiro Yahagi

Shuichi Itagaki

Shuichi Ono

Hisao Abe

Yoshifumi Midori

Eiju Komuro

Hitoshi Masumura

Shoichi Iwaya

Tomohiko Kato

Junji Aotani

Sho Masujima

Akira Shibue

Nobuaki Kikuchi

Kenichi Umeda

Iwaya Shoichi

Masahide Shibuya

A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

Thin film capacitor

A thin film capacitor is provided with a lower electrode layer, a dielectric layer arranged on the lower electrode layer, and an upper electrode layer formed on the dielectric layer. An insulator patch material, circular when projected from above, is formed at a boundary of the dielectric layer and the upper electrode layer of the thin film capacitor of this invention. The circular insulator patch improves a withstand voltage, by reducing accumulation of charges.

A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.

A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D&#x3e;d.

A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount Lof a protrusion part of n(n&#x2267;2) internal electrode layer from the under electrode side is smaller than another protrusion amount Lof another protrusion part of (n&#x2212;1)internal electrode layer.

A thin film capacitor and a method of manufacturing the same are provided. The thin film capacitor includes a metal foil, dielectric layers and internal electrode layers alternately disposed on the metal foil, and a top electrode layer on the topmost layer among the two or more dielectric layers. These layers have peripheries that define an outer profile flaring toward the metal foil as viewed from the stacking direction of the thin film capacitor, and at least one dielectric layer of two or more dielectric layers satisfies a relationship B&#x3e;A&#x3e;0 wherein A is a gap of the periphery of the internal electrode layer directly below the dielectric layer protruding from the periphery of the dielectric layer, and B is a gap of the periphery of the dielectric layer protruding from the periphery of the internal electrode layer or the top electrode layer directly above the dielectric layer. The thin film capacitor has a structure free from short-circuiting and reducing debris of broken dielectric material.

Method of manufacturing a thin film capacitor having separated dielectric films

To provide a thin-film capacitor capable of improving the stability of electric connection between an internal electrode layer and a connection electrode. The thin-film capacitor comprises: two or more dielectric layers deposited above a base electrode; an internal electrode layer being deposited between the dielectric layers and having a projecting portion which projects from the dielectric layer when seen from a laminating direction; and a connection electrode electrically connected to the internal electrode layer via at least a part of a surface and an end face of the internal electrode layer included in the projecting portion, wherein a ratio L/t between a projection amount L of the projecting portion of the internal electrode layer with respect to the dielectric layer and a thickness t of the internal electrode layer is 0.5 to 120.

Thin-film capacitor and manufacturing method thereof

A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 &#x3bc;mto 7.0 &#x3bc;m, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.

Thin-film capacitor with internally hollow through holes

A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.

Dielectric device and method of manufacturing dielectric device

To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer.

Thin-film capacitor

A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.

Method of manufacturing thin film capacitor and thin film capacitor

In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.

Electronic component and electronic component module

In a dielectric element, the angle &#x3b8; made by either the top face or the bottom face and the side faces is either 0&#xb0;&#x3c;&#x3b8;&#x3c;89&#xb0;, or is 91&#xb0;&#x3c;&#x3b8;&#x3c;180&#xb0;, and is an angle other than 89&#xb0;&#x2266;&#x3b8;&#x2266;91&#xb0;. By this means, the area of contact of the side faces of the dielectric element with a glass epoxy resin substrate and with insulating material is increased, adhesion with the resin substrates is improved, and strength and reliability can be enhanced when buried between the two resin substrates.

A basic portion layerof a substrate electrodeconnected to a projecting electrodeelectrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layeris formed is subjected to sintering. A surface of the basic portion layerin the sintered substrate member is polished. On the polished basic portion layer, the plating layersare formed, so that surface roughness of the substrate electrodemay be, for example, not larger than 0.1 &#x3bc;mRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

Growing community of inventors

Tokyo, Japan

Yasunobu Oikawa