Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Yasunari Hino

Yoshihito Asao

Kiyoshi Arai

Masao Kikuchi

Yo Tanaka

Yuji Sato

Masaki Kato

Kazuo Kobayashi

Hiroyuki Akita

Dai Nakajima

Taketoshi Shikano

Masashi Sakai

Kazuhiro Tada

Daisuke Kawabata

Shinichiro Katsuki

Aya Iwata

Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved.

Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer

There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 μm or less. The circuit surface and the external terminal are each made of copper or copper alloy.

Semiconductor device, power converter, method for manufacturing semiconductor device, and method for manufacturing power converter

There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 &#x3bc;m or less. The circuit surface and the external terminal are each made of copper or copper alloy.

The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.

Semiconductor device with high quality and reliability wiring connection, and method for manufacturing the same

A semiconductor module includes: a semiconductor device having an upper surface electrode; a conductor plate joined to the upper surface electrode via a bonding member; and a wire bonded to the conductor plate, wherein the wire is a metal thread or a ribbon bond, and the bonding member is a porous sintered metal material impregnated with resin.

Semiconductor module, method for manufacturing the same and electric power conversion device

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

Power semiconductor device and method for manufacturing same

A semiconductor module of the present invention includes: a semiconductor element having a first main surface and a second main surface facing the first main surface, the semiconductor element including a front surface electrode and a back surface electrode on the first main surface and the second main surface, respectively; a metal plate electrically connected to the back surface electrode of the semiconductor element through a sintered bonding material including metal nanoparticles; and a plate-shaped conductor electrically connected to the front surface electrode of the semiconductor element through the sintered bonding material including the metal nanoparticles. The metal plate and the conductor include grooves communicating between a bonding region bonded to the semiconductor element and the outside of the bonding region.

Semiconductor module and method for manufacturing the same

A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.

Method for manufacturing semiconductor device

A bonding structure including metal nano particles includes a first member having a metal surface on at least one side, a second member having a metal surface on at least one side, the second member being disposed such that the metal surface of the second member faces the metal surface of the first member, and a bonding material bonding the first member and the second member by sinter-bonding the metal nano particles. At least one of the metal surfaces of the first member and the second member is formed to be a rough surface having a surface roughness within the range from 0.5 &#x3bc;m to 2.0 &#x3bc;m.

Bonding structure including metal nano particle

A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c).

Semiconductor device and manufacturing method thereof

A P-side package unit and a N-side package unit are arranged on a main surface of a metal heatsink such that a main surface extends in a direction perpendicular to the main surface of the heatsink. Each of the P-side package unit and the N-side package unit is fixed by an end edge portion of a heatsink being clipped by a rail-shaped unit mounting part provided on the main surface of the heatsink.

Semiconductor device module

The present invention provides an automotive electric motor-generator that can achieve sufficient cooling of a radiating plate by ensuring a sufficient cooling airflow ventilation channel within limited axial or radial dimensions. In the present invention, first and second radiating plates each form a fan shape, have N-channel power MOSFETs mounted thereto, and have a drain potential for the power MOSFETs. A first circuit board includes insert conductors that connect the power MOSFETs in series, and a second circuit board has insert conductors that are connected to source terminals of the power MOSFETs and that have negative potential. The first radiating plate, the second radiating plate, the first circuit board, and the second circuit board are disposed in a fan shape that is centered around a shaft so as to line up radially in a plane that is perpendicular to the shaft outside one axial end of a rear housing.

Automotive electric motor-generator with radial plates and circuit boards disposed in a fan shape in a common plane around shaft of rotor

A method for assembling semiconductor switching elements and a heat sink in a rotary electric machine includes: a first step in which bare chips of the semiconductor switching elements are bonded to the heat sink using a good heat conductive bonding material; a second step which connects the bare chips to a wiring part by wire bonding; and a third step in which a resin which seals the bare chips and the wiring part is applied to the heat sink in a striding manner in a state that output terminal portions of the wiring part and fins of the heat sink are exposed to the outside of the resin.

Growing community of inventors

Tokyo, Japan

Yasunari Hino