Ngk Insulators, Inc.

Yasumitsu Tomita

Yutaka Unno

Hideyoshi Tsuruta

A processing device is provided, including a base which holds a processing target. A gas providing passage having a circular cross section is formed in the base, and provides gas to an outer circumference of the base.

Processing device

A gas providing member includes a body portion which forms a gas providing passage between the body portion and a processing member which holds the processing target, and the gas providing passage provides gas onto a processing target. In the body portion, a gas reservoir portion located in the gas providing passage is formed.

Gas providing member and processing device

A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25&#x3a9; or less.

Plasma processing member

A substrate processing device is provided, which includes a resistance heating element and a high-frequency electrode, to which a voltage is applied, a power supply member for a resistance heating element, and a power supply member for a high-frequency electrode, which supply power to the resistance heating element and the high-frequency electrode, respectively, a peripheral member disposed close to circumferences of the power supply members, and heat insulators arranged between the power supply members and the peripheral member and having heat resistance to a temperature at least higher than 250&#xb0; C.

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Handa, Japan

Yasumitsu Tomita