Toshiba Ceramics Co., Ltd.

The Furukawa Electric Co., Ltd.

Yasumi Sasaki

Eiichi Toya

Shuitsu Matsuo

Hiroshi Okada

Masaaki Yamamoto

Takashi Tanaka

Tatsuro Miura

Takeshi Inaba

Kazunori Meguro

Kazuo Ito

Masanobu Sugimura

Yukio Itoh

Hideaki Kameoka

Masayoshi Yamaguchi

Shinichi Furumoto

Yosuke Watanabe

Kenya Kawabata

Tadashi Ohashi

Shuichi Takeda

Masahiko Ichishima

Shigeru Abe

Shigeo Kato

Kazuo Itoh

Masayuki Sumiya

Masanori Sato

Yukio Ito

Yoshinobu Tanada

Yasuyuki Ooi

Nobuyuki Joshima

Masayuki Ohkawa

Masatoshi Kasahara

Ritsurou Makita

A heat pipe has a flat container; a wick structure housed inside the flat container; and a working fluid sealed inside the flat container, wherein in at least one cross section of the flat container, the wick structure contacts both of the pair of flat inner surfaces of the flat container, and both side faces of the wick structure do not contact any of the inner surfaces of the flat container, wherein the wick structure has a first wick part and a second wick part, respectively disposed in the lengthwise direction of the flat container, the second wick part being directly or indirectly connected to the first wick part and having a maximum width that is wider than a maximum width of the first wick part, and wherein the second wick part is disposed in the heat receiving portion of the heat pipe.

Heat pipe

A heat pipe has a heat receiving portion that is to be thermally connected to a heat generating member so as to absorb heat from the heat generating member. The heat pipe includes a sealed flat container; a wick structure housed inside the flat container; and a working fluid sealed inside the flat container. In at least one cross section of the flat container, the wick structure includes a first wick member and a second wick member disposed vertically, the wick structure also has a first wick part and a second wick part respectively disposed in the lengthwise direction of the flat container, the second wick part having a maximum width that is wider than a maximum width of the first wick part. The second wick part is disposed in the heat receiving portion of the heat pipe.

An object of the present disclosure is to provide a heat sink that can equalize heat input in a heat receiving portion and increase a volume of the heat receiving portion, prevent an increase in heat resistance in the heat receiving portion even when a heat generation amount from a heat-generating element increases, and exhibit excellent cooling performance with respect to a cooling target. There is provided a heat sink including: a heat transport member having a heat receiving portion thermally connected to a heat-generating element; a tube body connected to a heat insulating portion or a heat radiating portion of the heat transport member; and a heat radiation fin group which is thermally connected to the tube body and in which a plurality of heat radiation fins are arranged, in which the heat transport member has an integral internal space that communicates from the heat receiving portion to a connection portion with the tube body and is sealed with a working fluid, and the internal space of the heat transport member communicates with an internal space of the tube body.

Heat sink

The invention provides a flattened heat pipe whose vapor flowing passage is not clogged and which has an excellent capillary force. The flattened heat pipe has a closed container formed by flattening a tubular container, a plurality of wick structures arrayed within the container in a longitudinal direction so as to form an acute-angled portion where a capillary force is large at least partially within the container, a hollow portion formed of an outer peripheral surface of the wick structure and an inner wall surface of the container and a working fluid sealed into the container.

Flattened heat pipe and manufacturing method thereof

The present invention has proposed a thin sheet type heat pipe comprising: a hermetically sealed container which is formed of foil sheets opposed and jointed at peripheral portions; at least one spacer which is movably housed in said container and has a fluid path to exert a capillary force; at least one spacer which is movably housed in said container and has no fluid path; and a working fluid enclosed in said container.

Thin sheet type heat pipe

A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

Heat treatment jig and method of producing the same

End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.

Vertical heat treatment device for semiconductor

A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.

Ceramic device

A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.

Electrode plate for plasma etching

The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.

Susceptor for vapor-growth deposition

A method for impregnating a shaped ceramic material with an impregnation liquid, comprising the steps of placing the shaped ceramic material in the impregnation liquid, and applying an impregnation pressure to the impregnation liquid through a pressure transfer liquid so that the shaped ceramic material is impregnated with the impregnation liquid.

Method for making an impregnated ceramic material

An electrolysis apparatus has a furnace for setting a silica glass component such as a process tube or crucible, a heater for heating the component, a sensor for measuring a temperature of an inside portion of the furnace, an anode and an cathode for applying a voltage across the component so as to electrolyze the component, a tube for holding the anode, a device for supplying an inert gas into a space between the anode and the holding tube, and a DC power source connected to the anode and the cathode.

Electrolysis apparatus

A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.

Growing community of inventors

Tokyo, Japan

Yasumi Sasaki