Kabushiki Kaisha Toshiba

Kabushiki Kaisha Tohisba

Yasumasa Suizu

Yoshio Ozawa

Yoshitaka Tsunashima

Masayuki Tanaka

Kiyotaka Miyano

Seiji Inumiya

Hiroaki Hazama

Yuji Fukazawa

Kazuo Saki

Wakako Moriyama

Naoki Kai

Seiji Ihumiya

Keiki Nagai

Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof

A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode is formed on the gate electrode insulating film, and an oxidation process using ozone is performed to sufficiently round the shape of the lower edge of the gate electrode.

Semiconductor device and method of manufacture thereof

Method of manufacturing a semiconductor device using an oxidation process

A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.

Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films

Rapid thermal annealing for heat-treating a semiconductor substrate is provided without damaging the substrate surface After the semiconductor substrate is placed in an annealing apparatus having an incoherent light source, an inert gas containing a very small amount of an oxygen gas is introduced into the annealing apparatus, while applying an incoherent light to the substrate surface from the incoherent light source. In this case, the oxygen concentration in the inert gas is defined by 10 to 1000 ppm.

Rapid thermal annealing for semiconductor substrate by using incoherent

Growing community of inventors

Oita, Japan

Yasumasa Suizu