Showa Denko K.k.

Toyoda Gosei Co., Ltd.

Yasumasa Sasaki

Kenzo Hanawa

Hisayuki Miki

Masato Fukushima

Akira Sakawaki

Yasunori Yokoyama

Hiromitsu Sakai

Hiroaki Kaji

Yoshiaki Ikenoue

Hitoshi Yokouchi

Ryoko Konta

A sputtering apparatus () includes: a chamber () having an inside maintained in a depressurized state to generate plasma discharge (); a cathode () placed in the chamber () and holding a target (); and a substrate holder () holding a substrate () so that one surface of the substrate () faces the surface of the target (). The substrate () is arranged at an upper portion in the sputtering apparatus () with the surface of the substrate () facing downward. The target () is arranged at a lower portion in the sputtering apparatus () with the surface of the target () facing upward. The sputtering apparatus () includes a heater () for heating the substrate (). The temperature of the substrate () is raised by absorbing electromagnetic waves radiated from the heater (). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

Sputtering apparatus and manufacturing method of semiconductor light-emitting element

The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Solar cell and process for producing the same

A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90&#xb0;.

Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus

According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

Group III nitride semiconductor multilayer structure and production method thereof

The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from the substrate side, and the buffer layer and the underlying layer are formed by a sputtering method. A deposition temperature of the buffer layer is adjusted to a temperature lower than a deposition temperature of the underlying layer, or the thickness of the buffer layer is adjusted to 5 nm to 500 nm. Furthermore, the multilayered structure comprises at least an underlying layer and a light-emissive layer from the substrate side and the underlying layer is formed by a sputtering method, and the method comprises the step of forming the light-emissive layer by a metal-organic chemical vapor deposition (MOCVD method).

Deposition method of III group nitride compound semiconductor laminated structure

A method for the production of a magnetic recording medium () includes the steps of depositing a magnetic layer or Co-containing magnetic layer () on at least one side of a nonmagnetic substrate () and partially implanting atoms into the magnetic layer or Co-containing magnetic layer to partially unmagnetize the magnetic layer or Co-containing magnetic layer, thereby forming nonmagnetic parts () and a magnetic recording pattern magnetically separated by the nonmagnetic parts and, in the case of the Co-containing magnetic layer, lowering Co (002) or Co (110) peak strength of a relevant part of the Co-containing magnetic layer as determined by the X-ray diffraction to &#xbd; or less. A magnetic recording and reproducing device includes the magnetic recording medium (), a driving part () for driving the magnetic recording medium in a direction of recording, a magnetic head () consisting of a recording part and a regenerating part, means () for moving the magnetic head relative to the magnetic recording medium, and recording and reproducing signal processing means () adapted to enter a signal into the magnetic head and regenerate an output signal from the magnetic head.

Magnetic recording medium, method for production thereof and magnetic recording and reproducing device

Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layeris 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.

Group-III nitride semiconductor light-emitting device, method for manufacturing the same, and lamp

The present invention aims to provide a method of producing a magnetic recording medium which is a method of producing a magnetic recording medium having a magnetically-separated magnetic recording pattern, the method including: forming a magnetic layer on a non-magnetic substrate; then exposing a surface of the magnetic layer partially to reactive plasma, or a reactive ion generated in the plasma to amorphize the portion of the magnetic layer.

Method of producing magnetic recording medium, and magnetic recording and reading device

The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substratea semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrateand a sputtering target are arranged so as to face each other, and a gap between the substrateand the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cmis applied to the substrate. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.

Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp

A discrete track-type magnetic recording medium () includes a nonmagnetic substrate (), a magnetic recording track and a servo signal pattern which are provided on at least one side of the nonmagnetic substrate, and a nonmagnetic part () consisting of a nonmagnetic alloy containing Si for physically separating the magnetic recording track and the servo signal pattern. A magnetic recording and reproducing device comprising, in combination, the magnetic recording medium (), a driving part () serving to drive the magnetic recording medium in a direction of recording, a magnetic head () composed of a recording part and a reproducing part, a device () to impart motion to the magnetic head relative to the magnetic recording medium, and a recording and reproducing signal processing device () for entering a signal into the magnetic head and reproducing an output signal from the magnetic head.

A method for producing a group III nitride semiconductor light-emitting device including: an intermediate layer formation step in which an intermediate layer containing group III nitride is formed on a substrate by sputtering, and a laminate semiconductor formation step in which an n-type semiconductor layer having a base layer, a light-emitting layer, and a p-type semiconductor layer are laminated on the intermediate layer in this order, wherein the method includes a pretreatment step in which the intermediate layer is treated using plasma between the intermediate layer formation step and the laminate semiconductor formation step, and a formation step for the base layer which is included in the laminate semiconductor formation step is a step for laminating the base layer by sputtering.

Method for producing group III nitride semiconductor light-emitting device

A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.

Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp

An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1&#xd7;10to 1&#xd7;10crystals/&#x3bc;m.

Group III nitride compound semiconductor stacked structure

A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.

Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

Growing community of inventors

Kamakura, Japan

Yasumasa Sasaki