Oki Electric Industry Co., Ltd.

Optohub Co., Ltd

Yasumasa Kashima

Tsutomu Munakata

Ikuo Kurachi

Hiroshi Takano

Masao Kobayashi

Takashi Tsubota

Yoji Hosoi

To provide a photo detection device and a manufacturing method thereof, the photo detection device comprising a SPAD in which a substrate-manufacturing cost is kept sufficiently low compared to InGaAs, afterpulsing is less and DCR is also reduced. A photo detection device detecting an incident light from an object, comprising: (i) a P-type silicon (Si) substrate; (ii) a P-type germanium (Ge) layer formed by epitaxial growth on a first surface serving as a front surface of the P-type silicon (Si) substrate; and (iii) a P-type thin film silicon (Si) layer formed on the P-type germanium (Ge) layer, (iv) wherein the P-type thin film silicon (Si) layer is divided into a first region and a second region by a Shallow Trench Isolation (STI), multiple single photon avalanche diodes (SPADs) arranged in an array are formed in the first region, and a CMOS transistor circuit driving the SPADs is formed in the second region.

Photo detection device

The semiconductor image sensor of the present invention comprises a light receiving element formed in a silicon substrate under an insulation film of an SOI substrate comprising the silicon substrate, the insulation film formed on the silicon substrate, and a semiconductor layer formed on the insulation film, and composed of a pn junction diode formed in a vertical direction to a main surface of the silicon substrate and having sensitivity to near-infrared light, and a high voltage generating circuit configured to generate an applied voltage for applying a reverse bias voltage to the pn junction diode, and an impurity concentration of the silicon substrate is in a range of 1×10/cmto 1×10/cm, a film thickness is in a range of 300 μm to 700 μm, and the applied voltage is in a range of 10 V to 60 V.

Semiconductor image sensor

A semiconductor device includes a substrate formed of a group III element and a group V element, a buffer layer having a thickness of at least 0.5 &mgr;m covering an the entire main surface of the substrate, and a selective-area growth layer grown selectively on the buffer layer. The buffer layer includes both the group III element and the group V element. The buffer layer is formed by metalorganic vapor-phase epitaxy.

Semiconductor device and method of manufacturing the same

A compound semiconductor light emitting device that can keep the effect of confining carriers into an active layer and that can improve light emission efficiency. In the device having a first conductive type substrate; and active layer on the first conductive type substrate; a second conductive type sub-layer and a first conductive type sub-layer, in this order from a lower portion to an upper portion of the device, on the first conductive type substrate and at both sides of the active layer; a second conductive type cladding layer on/over the active layer and the first conductive type sub-layer; and a second conductive type contact layer on the second conductive type cladding layer . A p-type diffusion barrier layer is further formed between the n-type sub-layer and the p-type cladding layer.

Compound semiconductor light emitting device and process for producing the same

A compound semiconductor light emitting device that confines carriers into an active layer and that has improved light emission efficiency. The device has a first conductive type substrate; an active layer on the first conductive type substrate; a second conductive type sub-layer and a first conductive type sub-layer, in this order from a lower portion to an upper portion of the device, on the first conductive type substrate and at both sides of the active layer; a second conductive type cladding layer on/over the active layer and the first conductive type sub-layer; and a second conductive type contact layer on the second conductive type cladding layer. A p-type diffusion barrier layer is further formed between the n-type sub-layer and the p-type cladding layer.

The method for forming the compound semiconductor device includes the step of forming a buffer layer so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the method for forming the compound semiconductor device can avoid a shape change and a thickness change because of defect of the periodic corrugation. Further, the compound semiconductor device includes a buffer layer formed so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the compound semiconductor device can get superior characteristics of the compound semiconductor device.

Method for forming a compound semiconductor device using a buffer layer

An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of the light emitting region, and a composition change region formed between the light emitting region and the optical absorption region, the composition change region having the bandgap energy continuously changes. Accordingly, an edge emitting LED is able to produce a stable, spontaneous emission of a light under a wide range of operating conditions. Furthermore, a method of forming an edge emitting LED, comprising the steps of: providing a semiconductor substrate having a previous formation region of an active layer having a light emitting region and an optical absorption region continued with the light emitting region; forming a mask pattern over the substrate located on both sides of the optical absorption region; and forming the active layer over the formed structure. Accordingly, a method of forming a edge emitting LED is able to form a light emitting region and an optical absorption region, with one-step growth.

Edge emitting led and method of forming the same

A light-emitting diode 10 showing stable temperature characteristics achieved by reliably preventing stimulated emission regardless of temperature changes, comprising:

Method of manufacturing a light emitting diode to vary band gap energy

A method of fabricating an abrupt hetero interface by organometallic vapor growth comprises supplying a first Group III source gas at a predetermined flow rate and a first Group V source gas at a predetermined flow rate to a growth chamber during a first growth process to form a first Group III-Group V compound layer. During a growth interruption process, the inflow of the first Group III source gas to the growth chamber is stopped, while the supply of the first Group V source gas to the growth chamber is continued, to thereby interrupt the growth of the first Group III-Group V compound layer. Finally, during a second growth process, the first Group V source gas flowing into the growth chamber is switched to a second Group V source gas, and a second Group III source gas is simultaneously supplied at a predetermined flow rate to the growth chamber, thereby forming a second Group III-Group V compound layer on the first Group III-Group V compound layer.

Method of fabricating an abrupt hetero interface by organometallic vapor

Edge emitting LED having a selective-area growth optical absorption

An active layer of a light-emitting diode is surrounded jointly by a pair of clad layers and a pair of block layers. The active layer includes a light-emitting portion and a light-absorbing portion which are continuously formed in one body. The light-emitting portion emits light when carriers are injected thereinto between the pair of clad layers, and the light-absorbing portion absorbs light coming from the light-emitting portion. A bandgap of the light-absorbing portion may be smaller than that of the light-emitting portion.

Light emitting diode having light-emitting and light-absorbing regions

A superluminescent diode has an active layer confined in a channel cut into current blocking layers on a semiconductor substrate. This structure gives a small output beam diameter and high coupling efficiency, even when coupled into single-mode fiber. At the end of the channel distant from the output facet, the active layer makes slanting contact with a rough diffusing surface formed by the current blocking layers and substrate. This easily-manufactured diffusing surface reduces optical gain within the active layer, thereby preventing lasing without requiring an antireflection coating.

Superluminescent diode

An LED includes a semiconductor substrate, a first blocking layer formed on this semiconductor substrate, a second blocking layer formed on this first blocking layer, a first V-channel extending from the second blocking layer to the semiconductor substrate, and a stripe-geometry light-emitting region formed in the first V-channel. Light is emitted from the LED from one edge of the light-emitting region due to a flow of current in the light-emitting region, to which the current is confined by the blocking layers. The LED also comprises a second V-channel disposed at a certain distance from the other edge of the light-emitting region, on the optical path of the light emitted from this other edge, and an absorbing region is formed in the second V-channel. This absorbing region absorbs the light emitted from the other edge of the light-emitting region. The LED has excellent characteristics in which a stable output of spontaneously-emitted light can be obtained under a wide variety of operating conditions.

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Tokyo, Japan

Yasumasa Kashima