Sony Group Corporation

Sony Semiconductor Solutions Corporation

Yasumasa Akutagawa

Hideaki Togashi

Yoshihiro Ando

Akira Furukawa

Sho Nishida

Yusuke Murakawa

Hiroki Iwashita

Yoshito Nagashima

Mikio Ishimaru

Taku Minoda

Takahito Niwa

An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Imaging element and imaging apparatus

Growing community of inventors

Kumamoto, Japan

Yasumasa Akutagawa