Hitachi, Ltd.

Hitachi Displays, Ltd.

Renesas Technology Corp.

Panasonic Liquid Crystal Display Co., Ltd.

Hitachi Displays Co., Ltd.

Yasuko Gotoh

Toshihiko Tanaka

Takashi Hattori

Hiroshi Shiraishi

Takanori Nakayama

Hidetoshi Satoh

Jun Ooida

Kaori Miyazaki

Ryuuta Watanabe

Shigeru Ohno

Norio Hasegawa

Toshiki Kaneko

Katsuya Hayano

Saori Sugiyama

Naoko Asai

Kunihiko Watanabe

Tsuyoshi Uchida

Takashi Matsuzaka

Katsuhiro Kawasaki

Hiroki Takahashi

Junichi Uehara

Kenta Kamoshida

Hideshi Nomura

Kazuhiko Koyahara

A liquid crystal display device and a manufacturing method thereof which can suppress chipping of an alignment film or the like are provided. A liquid crystal display device and a manufacturing method thereof which can obviate the complication of manufacturing steps and the increase of a manufacturing cost are also provided. A liquid crystal display device includes: a TFT substrate; a counter substrate; and liquid crystal sandwiched between the TFT substrate and the counter substrate. A plurality of color filters are arranged on the counter substrate, and spacers are formed by stacking the plurality of color filters and by covering a surface of stacked color filters with an overcoat layer. Pedestals are formed on the TFT substrate in a state where the pedestal faces the spacer in an opposed manner. The pedestal is formed by stacking at least a semiconductor layer and a metal layer formed which are simultaneously with a thin film transistor on the TFT substrate. A width of a pedestal portion constituted of the semiconductor layer is substantially equal to a width of the spacer.

Liquid crystal display device

An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.

Display device

The proceeding of peeling of a conductive layer in the vicinity of terminals is prevented. A display panel includes a conductive layer extending to the outside of terminals, and the conductive layer has slits extending in directions from one end face to the other end face alternately at two end faces along the extending direction of the conductive layer.

Display panel and display device

A liquid crystal display device comprises a pair of substrates which are arranged to face each other in an opposed manner while sandwiching liquid crystal therebetween, pixel regions which are formed on a liquid-crystal-side surface of one substrate out of the pair of substrates, and thin film transistors which are formed on respective pixel regions, wherein each thin film transistor includes a gate electrode connected to a gate signal line, a semiconductor layer laminated to the gate electrode by way of an insulation film, a drain electrode formed on the semiconductor layer and connected to a drain signal line, and a source electrode connected to a pixel electrode, and the semiconductor layer is formed in a periodically irregular shape in a zone having a width substantially larger than a width of the source electrode on a side thereof from which at least the source electrode is pulled out.

Liquid crystal display device with spacer facing capacitance electrode

Liquid crystal display device with spacers facing capacitive element

A display device is provided with a first contact hole formed in a display region and a second contact hole formed in a terminal region, and a first insulating layer and a second insulating layer formed in that order. The taper angle of the first insulating layer at the first contact hole is larger than the taper angle of the first insulating layer at the second contact hole, and the taper angle of the second insulating layer at the first contact hole is larger than the taper angle of the second insulating layer around the second contact hole.

Display device having contact holes' taper angle larger in display region than in terminal region

To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.

Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method

A pattern can be written in accordance with a distortion which changes depending upon exposure conditions of the optical exposure system and exposed pattern features, and a pattern can be written with a high alignment accuracy by the optical exposure system and an electron beam lithography system or two optical exposure systems. A pattern which is exposed by optical exposure system divided into very small areas shown by broken lines, and pattern feature amounts (fx), (fy) at each area are calculated. A correction amount is obtained by using the pattern feature amount and the position within an exposure field as parameters based on exposure distortion examined by a standard pattern predeterminedly.

Method for manufacturing semiconductor devices utilizing plurality of exposure systems

Growing community of inventors

Mobara, Japan

Yasuko Gotoh