Renesas Electronics Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Yasuki Takata

Hiroshi Horibe

Hideyuki Arakawa

Kaori Sumitomo

Kazunari Michii

Kazuyuki Misumi

Kazushi Hatauchi

Naoya Yasuda

Katsuyuki Fukudome

There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.

Semiconductor device and a manufacturing method thereof

Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (&#x3b1; portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.

Method of manufacturing semiconductor device and semiconductor device

A plurality of inner leadsare provided around a die pad. A grounded GND leadis provided in a region between the die padand the plurality of inner leads. A semiconductor chipand the plurality of inner leadsare connected to each other by a plurality of wires. The semiconductor chipand the GND leadare connected to each other by GND wires. The GND wiresare disposed between a plurality of wires. The distance between ends of each adjacent pair of the inner leadsis 0.2 mm or less.

Resin molded semiconductor device and differential amplifier circuit

A semiconductor package includes a semiconductor chip, a die pad, an adhesive, metal wires, LOC inner leads, and standard inner leads sealed within a sealing resin. The LOC inner leads and the standard inner leads are arranged in the same plane and both are arranged along one side of the semiconductor chip. Clearance between the inner leads and the die pad larger than the total thickness of the semiconductor chip and the bonding material. Thus, a semiconductor chip having electrode pads broadly distributed can be employed and the section modulus of the semiconductor package can be increased.

Semiconductor package

Growing community of inventors

Kanagawa, Japan

Yasuki Takata