Sumitomo Electric Hardmetal Corp.

Sumitomo Electric Industries, Limited

Yasuki Kido

Anongsack Paseuth

Susumu Okuno

Shinya Imamura

Yoshihiro Kimura

Fumiyoshi Kobayashi

Keiichi Tsuda

Masahito Hikiji

Yuki Tanaka

Koji Kuramochi

Yuki Rikiso

Atsuhiro Yoneda

Katsumi Okamura

Michiko Matsukawa

Kosuke Fukae

Daiji Tabayashi

Masami Watanabe

Kazuhiro Hirose

Chiaki Tokuda

Tomoyuki Ishida

Kosuke Tominaga

Takashi Sekiya

Tsuyoshi Yamamoto

A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises a total of 80% by volume or more of the tungsten carbide particles and the binder phase, the cemented carbide comprises 0.1 vol % or more and 20 vol % or less of the binder phase, the cemented carbide comprises at least one first element selected from the group consisting of boron, aluminum, silicon, iron, nickel, germanium, ruthenium, rhenium, osmium, iridium, and platinum, the cemented carbide comprises a total of 0.01 atomic % or more and 10 atomic % or less of the first element, the binder phase comprises 50% by mass or more of cobalt, the first element is segregated in a first interface region between the tungsten carbide particles adjacent to each other, and the first element is present at a C site of tungsten carbide in the first interface region.

Cemented carbide and cutting tool using the same

Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a percentage (H2/H1)×100 of a hardness of the binder phase at 600° C., H2 GPa, to a hardness at 25° C., H1 GPa, as measured by a nanoindenter method is 25% or more.

Cemented carbide

Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a Young's modulus of the binder phase at 25° C. is 170 GPa or more, as measured by a nanoindenter method.

Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.5% by volume or more and 23% by volume or less of the binder phase, the binder phase contains 40% by mass or more of cobalt, the binder phase further contains at least one first element selected from the group consisting of silicon, phosphorus, germanium, tin, rhenium, ruthenium, osmium, iridium, and platinum, the first element is not segregated in a first interface region between the tungsten carbide grains that are adjacent to each other, and the first element is not segregated in a second interface region between the tungsten carbide grain and binder phase that are adjacent to each other.

Cemented carbide and cutting tool

A cutting tool includes: a substrate; and a coating film disposed on the substrate, wherein the coating film includes an α-AlOlayer, the α-AlOlayer includes a plurality of α-AlOcrystal grains, and has a TC(006) of more than 5 in texture coefficient TC(hkl), and an elastic modulus E1 of the α-AlOlayer at a room temperature and an elastic modulus E2 of the α-AlOlayer at 800° C. represent a relation of the following expression B-1:0<{(1−2)/1}×100<10  Expression B-1.

Cutting tool

A cemented carbide consists of a first hard phase, second hard phases, and a binder phase, wherein the first hard phase is composed of tungsten carbide grains, a D10 and a D90 of grain sizes of the tungsten carbide grains are 0.40 μm or more and 2.00 μm or less respectively, the second hard phases are composed of at least one first compound selected from the group consisting of TaNbC, TaNbN, TaNbCN, TiCN, TiNbC, TiNbN, and TiNbCN, the cemented carbide includes 0.30% to 1.60% by volume of the second hard phases, an average of circularities of the second hard phases is 0.10 to 0.32, a standard deviation of the circularity is 0.094 to 0.130, the binder phase includes 50% by mass or more of cobalt, and the cemented carbide includes 8.0% to 12.0% by volume of the binder phase.

A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises a total of 80% by volume or more of the tungsten carbide particles and the binder phase, the cemented carbide comprises 0.1% by volume or more and 20% by volume or less of the binder phase, the cemented carbide comprises at least one first element selected from the group consisting of titanium, tantalum, niobium, zirconium, hafnium, and molybdenum, the cemented carbide comprises a total of 0.01 atomic % or more and 10.0 atomic % or less of the first element, the binder phase comprises 50% by mass or more of cobalt, and the first element is not segregated in a first interface region between the tungsten carbide particles adjacent to each other.

A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises at least one first element selected from the group consisting of titanium, tantalum, niobium, zirconium, cerium, yttrium, and boron, and wherein in a first graph in a coordinate system where an X axis is a distance from a position at which cobalt exhibits a maximum intensity, and a Y axis is a normalized intensity, a maximum peak M of each of the first element is present between a peak Wof tungsten closest to an origin and a further peak Wof tungsten closest to the peak W, a ratio IB/IA of an intensity IB to a maximum peak intensity IA of the maximum peak M is more than 0.5 in each of the first element, and the intensity IB is an intensity of the first element at a distance P

A cemented carbide consisting of a first hard phase, second hard phases, and a binder phase, wherein the first hard phase is composed of tungsten carbide grains, a D10 and a D90 of grain sizes of the tungsten carbide grains are 0.40 μm and 2.00 μm respectively, the second hard phases are composed of at least one first compound selected from the group consisting of TaNbC, TaNbN, TaNbCN, TiCN, TiNbC, TiNbN, and TiNbCN, the cemented carbide includes 0.30% to 1.60% by volume of the second hard phases, a median of a distance between centroids of two of the second hard phases that are closest is 4 to 15 μm, a coefficient of variation of the distance between centroids is 1.20 to 1.90, the binder phase includes 50% by mass or more of cobalt, and the cemented carbide includes 8.0 to 14.0% by volume of the binder phase.

A cemented carbide consisting of a first hard phase, second hard phases, and a binder phase, wherein the first hard phase is composed of tungsten carbide grains, a D10 and a D90 of grain sizes of the tungsten carbide grains are 0.40 sm or more and 2.00 sm or less respectively, the second hard phases are composed of at least one first compound selected from the group consisting of TaNbC, TaNbN, TaNbCN, TiCN, TiNbC, TiNbN, and TiNbCN, the cemented carbide includes 0.30 to 1.60% by volume of the second hard phases, a median of areas of the second hard phases is 0.90 to 1.20 μm, a coefficient of variation of the areas of the second hard phases is 0.50 to 1.20, the binder phase includes 50% by mass or more of cobalt, and the cemented carbide includes 8.0 to 12.0% by volume of the binder phase.

A cutting tool includes: a substrate; and a coating film disposed on the substrate, wherein the coating film includes an α-AlOlayer, the α-AlOlayer includes a plurality of α-AlOcrystal grains, and has a TC(006) of more than 5 in texture coefficient TC(hkl), and a plastic deformation amount hp of the α-AlOlayer at 800° C. is 0 nm or more and 100 nm or less.

A cutting tool includes: a substrate; and a coating film disposed on the substrate, wherein the coating film includes an α-AlOlayer, the α-AlOlayer includes a plurality of α-AlOcrystal grains, and has a TC(006) of more than 5 in texture coefficient TC(hkl), and a hardness H1 of the α-AlOlayer at a room temperature and a hardness H2 of the α-AlOlayer at 800° C. represent a relation of the following expression A-1:0<{(H1−H2)/H1}×100<60   Expression A-1.

Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a percentage (Y2/Y1)×100 of a Young's modulus of the binder phase at 600° C., Y2 GPa, to a Young's modulus at 25° C., Y1 GPa, as measured by a nanoindenter method is 50% or more.

Provided is a cutting tool including a base material and a coating layer provided on the base material, the coating layer including a titanium carbonitride layer provided on the base material, an intermediate layer provided on the titanium carbonitride layer in contact therewith, and an alumina layer provided on the intermediate layer in contact therewith, the intermediate layer being composed of a compound made of titanium, carbon, oxygen, and nitrogen, the intermediate layer having a thickness of more than 1 μm, when Patomic % represents an atomic ratio of the oxygen in an interface between the intermediate layer and the alumina layer, and Patomic % represents an atomic ratio of the oxygen at a point A away from the interface by 1 μm on a side of the intermediate layer, a ratio P/Pof the Pto the Pbeing more than or equal to 1.03.

A cutting tool comprises a substrate and a coating that coats the substrate, the coating including an α-alumina layer provided on the substrate, the α-alumina layer including crystal grains of α-alumina, the α-alumina layer including a lower portion and an upper portion, the upper portion being occupied in area at a ratio of 50% or more by crystal grains of α-alumina having a (006) plane with a normal thereto having a direction within ±15° with respect to a direction of the normal to the second interface, the lower portion being occupied in area at a ratio of 50% or more by crystal grains of α-alumina having a (006) plane with a normal thereto having a direction within ±15° with respect to the direction of the normal to the second interface, the α-alumina layer having a thickness of 3 μm or more and 20 μm or less.

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Itami, Japan

Yasuki Kido