Ricoh Company, Ltd.

Yasukazu Nakatani

Kazuhiro Yoneda

Takaaki Negoro

Katsuhiko Aisu

Katsuyuki Sakurano

Hirofumi Watanabe

Yoshinori Ueda

Takeshi Nagahisa

Hirobumi Watanabe

A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.

Photoelectric conversion device and image generation device

A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

Photoelectric conversion device, image generation device, and method of correcting output of photoelectric conversion device

Two types of high-pass filter circuit and a band-pass filter circuit are provided. Both types of high-pass filter circuit include a capacitor configured to input an input signal, a resistor connected between an output terminal of the capacitor and a prescribed bias voltage, and a signal output circuit connected to the output terminal of the capacitor and configured to buffer-amplify the input signal for output. In one of the two types of high-pass filter circuits, the resistor is formed on an SOI semiconductor substrate and includes two PN junction diodes that are inversely connected to each other in parallel. In the other one of the high-pass filter circuits, the resistor is formed on an SOI semiconductor substrate and includes two MOS transistors that are inversely connected to each other in parallel.

High-pass filter circuit and band-pass filter circuit

A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.

Semiconductor device, manufacturing method thereof and imaging apparatus

An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.

Imaging device, control method of imaging device, and pixel structure

An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

Imaging device and electronic device

A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Solid-state image sensing device with electrode implanted into deep trench

A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Image sensor having a plurality of phototransistors separated by trench-gate structures and method of manufacturing the same

An optical disc recording apparatus records external data on an optical disc by using a semiconductor laser. The optical disc recording apparatus includes a circuit board. The circuit board is mounted with a power supply source and an MCM (multi chip module). The power supply source outputs at least one power voltage including a first voltage, and the MCM receives the at least one power voltage including the first voltage output from the power supply source. The MCM includes a first circuit and a second circuit. The first circuit includes at least one power supply circuit which generates at least one power voltage including a second voltage. The second circuit receives the at least one power voltage including the second voltage output from the at least one power supply circuit of the first circuit. An optical disc recording method is also described.

Method and apparatus for high-speed optical disc recording using multi chip module

A semiconductor laser driving apparatus controls a semiconductor laser to output a prescribed intensity of laser light. The semiconductor laser driving apparatus includes at least two semiconductor laser driving circuits each outputting a prescribed amount of current to the semiconductor laser when operated, and a control circuit selectively transmitting a control signal and controlling one or more semiconductor laser driving circuits to operate in accordance with a prescribed intensity of laser light to be irradiated from the semiconductor laser.

Growing community of inventors

Hyogo, Japan

Yasukazu Nakatani